3 V, Voltage Monitoring Microprocessor Supervisory Circuits

GENERAL DESCRIPTION The ADM705/ADM706/ADM707/ADM708 microprocessor supervisory circuits are suitable for monitoring 5 V power supplies/batteries and can also monitor microprocessor activity. FEATURES Guaranteed RESET valid with VCC = 1 V 190 μA quiescent current Precision sup

3 V, Voltage Monitoring Microprocessor Supervisory Circuits

GENERAL DESCRIPTION The ADM706P/ADM706R/ADM706S/ADM706T and the ADM708R/ADM708S/ADM708T microprocessor supervisory circuits are suitable for monitoring either 3 V or 3.3 V power supplies. FEATURES Precision supply voltage monitor 2.63 V (ADM706P, ADM706R, ADM708R) 2.93 V (ADM70

3 V, Voltage Monitoring uP Supervisory Circuits

GENERAL DESCRIPTION The ADM706P/ADM706R/ADM706S/ADM706T and the ADM708R/ADM708S/ADM708T microprocessor supervisory circuits are suitable for monitoring either 3 V or 3.3 V power supplies. FEATURES Precision supply voltage monitor 2.63 V (ADM706P, ADM706R, ADM708R) 2.93 V (ADM70

封装/外壳：8-DIP（0.300"，7.62mm） 包装：卷带（TR） 描述：IC SUPERVISOR 1 CHANNEL 8DIP 集成电路（IC） 监控器

3 V, Voltage Monitoring Microprocessor Supervisory Circuits

GENERAL DESCRIPTION The ADM705/ADM706/ADM707/ADM708 microprocessor supervisory circuits are suitable for monitoring 5 V power supplies/batteries and can also monitor microprocessor activity. FEATURES Guaranteed RESET valid with VCC = 1 V 190 μA quiescent current Precision sup

3 V, Voltage Monitoring Microprocessor Supervisory Circuits

GENERAL DESCRIPTION The ADM706P/ADM706R/ADM706S/ADM706T and the ADM708R/ADM708S/ADM708T microprocessor supervisory circuits are suitable for monitoring either 3 V or 3.3 V power supplies. FEATURES Precision supply voltage monitor 2.63 V (ADM706P, ADM706R, ADM708R) 2.93 V (ADM70

封装/外壳：8-DIP（0.300"，7.62mm） 包装：卷带（TR） 描述：IC SUPERVISOR 1 CHANNEL 8DIP 集成电路（IC） 监控器

High Voltage Input Amplifier Circuit for Hi-Fi Power Amplifier

■ Overview The AN7062N is a high voltage integrated circuit designed for pre-driver of 60W-class Hi-Fi audio amp. Stereo operation is enabled due to two amplifiers built-in. ■ Features • High voltage • Low noise : Vni = 2.5µV (typ.) • Low distortion : THD = 0.003 (typ.) • Good channel separa

PHASE CONTROL THYRISTOR

PHASE CONTROL THYRISTOR Repetitive voltage up to 800 V Mean on-state current 4305 A Surge current 70 kA

Silicon Controlled Rectifiers

Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors . . . PNPN devices designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where reliability of operation is critical. • Small Size • P

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE ROHS COMPLIANT General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances resu