丝印代码：ADM130N04G；N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM130N04G series MOSFETs is a new technology, which combines an innovative super junc

MOSFET

丝印代码：ADM130N04；N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM130N04 series MOSFETs is a new technology, which combines an innovative super junct

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

● General Description The TF130N04S combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. ● Features Advance high cell density Trench technology Low RDS(ON) to

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

● General Description The TFD130N04N combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. ● Features Advance high cell density Trench technology Low RDS(ON) to

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

● General Description The TFD130N04S combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. ● Features Advance high cell density Trench technology Low RDS(ON) to