450 MHz to 6000 MHz TruPwr Detector

GENERAL DESCRIPTION The ADL5504 is a TruPwr™ mean-responding (true rms) power detector for use in high frequency receiver and transmitter signal chains from 450 MHz to 6000 MHz. Requiring only a single supply between 2.5 V and 3.3 V, the detector draws less than 1.8 mA. The input is internally ac

450 MHz to 6000 MHz TruPwr Detector

FEATURES True rms response detector Excellent temperature stability ±0.25 dB rms detection accuracy vs. temperature Over 35 dB input power dynamic range, inclusive of crest factor RF bandwidths from 450 MHz to 6000 MHz 500 Ω input impedance Single-supply operation: 2.5 V to 3.3 V Low power

包装：盒 描述：EVAL BOARD FOR ADL5504 开发板，套件，编程器 射频评估和开发套件，开发板

High-Current Switching Applications

NPN Epitaxial Planar Silicon Transistor Features • Composite type with 2 NPN transistors in one package facilitating high-density mounting • The CPH5504 is composed of 2 chips each equivaient to the CPH3205 • Ultrasmall package facilitates miniaturization in end products. (mounting height :

CMOS-CCD 1H Delay Line for NTSC

Description The CXL5504M/P are CMOS-CCD delay line ICs that provide 1H delay time for NTSC signals including the external low-pass filter. Features • Single power supply (5V) • Low power consumption 90mW (Typ.) • Built-in peripheral circuits • Clamp level of I/O signal can be selected Funct

High Voltage High Speed Power Switch Application

High Voltage High Speed Power Switch Application • Wide Safe Operating Area • Built-in Free-Wheeling Diode • Suitable for Electronic Ballast Application • Small Variance in Storage Time • Two Package Choices : D2-PAK or TO-220

High Voltage High Speed Power Switch Application

High Voltage High Speed Power Switch Application • Wide Safe Operating Area • Built-in Free-Wheeling Diode • Suitable for Electronic Ballast Application • Small Variance in Storage Time • Two Package Choices : D2-PAK or TO-220

6-PIN PHOTOTRANSISTOR OPTOCOUPLERS

DESCRIPTION The SL5500, SL5501, SL5504 and SL5511 are optically coupled isolators each consisting of an infrared emitting GaAs diode and a silicon NPN phototransistor with accessible base. These devices are housed in 6-pin dual-in-line packages (DIP). FEATURES • High output/input DC current tra