0.58 廓 CMOS, 2.3 V to 5.5 V, Quad SPDT/2:1 Mux in Mini LFCSP

GENERAL DESCRIPTION The ADG858 is a low voltage CMOS device containing four single-pole, double-throw (SPDT) switches. This device offers ultralow on resistance of less than 0.82 Ω over the full temperature range. The ADG858 is fully specified for 4.2 V to 5.5 V and 2.7 V to 3.6 V supply operatio

采用微型LFCSP封装的0.58 Ω CMOS、1.8 V至5.5 V四通道SPDT/2:1多路复用器

ADG858是一款低压CMOS器件，内置四个单刀双掷(SPDT)开关。在整个温度范围内，该器件具有小于0.82 Ω的超低导通电阻。额定电源电压为4.2 V至5.5 V和2.7 V至3.6 V。\n\n 当接通时，各开关在两个方向的导电性能相同，输入信号范围可扩展至电源电压范围。ADG858为先开后合式开关。\n\n 该器件采用2.1 mm×2.1 mm、16引脚微型LFCSP封装，使其成为空间受限应用的理想选择，如手机、PDA和MP3。\n\n 产品聚焦\n\n 在整个工作温度范围（-40°C至+85℃）内，导通电阻小于0.82 Ω。 1.8 V至5. • 典型导通电阻：0.58 Ω \n\n• 最大导通电阻(85°C)：0.82 Ω \n\n• 单电源电压：1.8 V至5.5 V \n\n• 高载流能力：250 mA连续 \n\n• 轨到轨开关工作 \n\n• 快速开关时间：<20 ns \n\n• 典型功耗：<0.1 μW \n\n• 2.1 mm × 2.1微型LFCSP封装;

0.58 廓 CMOS, 2.3 V to 5.5 V, Quad SPDT/2:1 Mux in Mini LFCSP

GENERAL DESCRIPTION The ADG858 is a low voltage CMOS device containing four single-pole, double-throw (SPDT) switches. This device offers ultralow on resistance of less than 0.82 Ω over the full temperature range. The ADG858 is fully specified for 4.2 V to 5.5 V and 2.7 V to 3.6 V supply operatio

0.58 廓 CMOS, 2.3 V to 5.5 V, Quad SPDT/2:1 Mux in Mini LFCSP

GENERAL DESCRIPTION The ADG858 is a low voltage CMOS device containing four single-pole, double-throw (SPDT) switches. This device offers ultralow on resistance of less than 0.82 Ω over the full temperature range. The ADG858 is fully specified for 4.2 V to 5.5 V and 2.7 V to 3.6 V supply operatio

PNP general purpose transistors

DESCRIPTION PNP transistor encapsulated in an ultra small SC-89 (SOT490) plastic SMD package. NPN complements: BC846F, BC847F and BC848F series. FEATURES • Power dissipation comparable to SOT23 • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching

NPN SILICON RF POWER TRANSISTOR

The RF Line NPN Silicon RF Power Transistor Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800–960 MHz. • Specified for VCE = 24 Vdc, IC = 0.5 Adc Characteristics Output Power = 3.

NPN SILICON RF POWER TRANSISTOR

The RF Line NPN Silicon RF Power Transistor Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800–960 MHz. • Specified for VCE = 24 Vdc, IC = 0.5 Adc Characteristics Output Power = 3.

Integrated Circuit Dual, Low-Noise JFET-Input Operational Amplifier

Description: The NTE858M and NTE858SM are dual, low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for lo

Integrated Circuit Dual, Low-Noise JFET-Input Operational Amplifier

Description: The NTE858M and NTE858SM are dual, low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for lo