CMOS Low Voltage 2ohm SPST Switches

GENERAL DESCRIPTION The ADG701/ADG702 are monolithic CMOS SPST switches. These switches are designed on an advanced submicron process that provides low power dissipation yet high switching speed, low on resistance, and low leakage currents. In addition, −3 dB bandwidths of greater than 200 MHz ca

CMOS Low Voltage 2 廓 SPST Switches

GENERAL DESCRIPTION The ADG701/ADG702 are monolithic CMOS SPST switches. These switches are designed on an advanced submicron process that provides low power dissipation yet high switching speed, low on resistance, and low leakage currents. In addition, −3 dB bandwidths of greater than 200 MHz ca

CMOS、低压、2 Ω、单刀单掷开关

ADG702是一款单芯片CMOS单刀单掷（SPST）开关。它采用先进的亚微米工艺设计，具有低功耗、高开关速度、低导通电阻和低泄漏电流特性，-3 dB带宽可以达到200 MHz以上。该器件可以采用1.8 V至5.5 V单电源供电，非常适合用在电池供电仪表中，以及配合ADI的新一代DAC和ADC使用。 • 单电源：1.8 V至5.5 V\n\n• 导通电阻：2 Ω（典型值）\n\n• 低导通电阻平坦度\n\n• -3 dB带宽：> 200 MHz;

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CMOS Low Voltage 2 廓 SPST Switches

GENERAL DESCRIPTION The ADG701/ADG702 are monolithic CMOS SPST switches. These switches are designed on an advanced submicron process that provides low power dissipation yet high switching speed, low on resistance, and low leakage currents. In addition, −3 dB bandwidths of greater than 200 MHz ca

CMOS Low Voltage 2 廓 SPST Switches

GENERAL DESCRIPTION The ADG701/ADG702 are monolithic CMOS SPST switches. These switches are designed on an advanced submicron process that provides low power dissipation yet high switching speed, low on resistance, and low leakage currents. In addition, −3 dB bandwidths of greater than 200 MHz ca

CMOS Low Voltage 2 廓 SPST Switches

GENERAL DESCRIPTION The ADG701/ADG702 are monolithic CMOS SPST switches. These switches are designed on an advanced submicron process that provides low power dissipation yet high switching speed, low on resistance, and low leakage currents. In addition, −3 dB bandwidths of greater than 200 MHz ca

CMOS Low Voltage 2 廓 SPST Switches

GENERAL DESCRIPTION The ADG701/ADG702 are monolithic CMOS SPST switches. These switches are designed on an advanced submicron process that provides low power dissipation yet high switching speed, low on resistance, and low leakage currents. In addition, −3 dB bandwidths of greater than 200 MHz ca

CMOS Low Voltage 2 廓 SPST Switches

GENERAL DESCRIPTION The ADG701/ADG702 are monolithic CMOS SPST switches. These switches are designed on an advanced submicron process that provides low power dissipation yet high switching speed, low on resistance, and low leakage currents. In addition, −3 dB bandwidths of greater than 200 MHz ca

CMOS Low Voltage 2 廓 SPST Switches

GENERAL DESCRIPTION The ADG701/ADG702 are monolithic CMOS SPST switches. These switches are designed on an advanced submicron process that provides low power dissipation yet high switching speed, low on resistance, and low leakage currents. In addition, −3 dB bandwidths of greater than 200 MHz ca

CMOS Low Voltage 2 廓 SPST Switches

GENERAL DESCRIPTION The ADG701/ADG702 are monolithic CMOS SPST switches. These switches are designed on an advanced submicron process that provides low power dissipation yet high switching speed, low on resistance, and low leakage currents. In addition, −3 dB bandwidths of greater than 200 MHz ca

CMOS Low Voltage 2ohm SPST Switches

GENERAL DESCRIPTION The ADG701/ADG702 are monolithic CMOS SPST switches. These switches are designed on an advanced submicron process that provides low power dissipation yet high switching speed, low on resistance, and low leakage currents. In addition, −3 dB bandwidths of greater than 200 MHz ca

CMOS Low Voltage 2 廓 SPST Switches

GENERAL DESCRIPTION The ADG701/ADG702 are monolithic CMOS SPST switches. These switches are designed on an advanced submicron process that provides low power dissipation yet high switching speed, low on resistance, and low leakage currents. In addition, −3 dB bandwidths of greater than 200 MHz ca

CMOS Low Voltage 2 廓 SPST Switches

GENERAL DESCRIPTION The ADG701/ADG702 are monolithic CMOS SPST switches. These switches are designed on an advanced submicron process that provides low power dissipation yet high switching speed, low on resistance, and low leakage currents. In addition, −3 dB bandwidths of greater than 200 MHz ca

CMOS Low Voltage 2 廓 SPST Switches

GENERAL DESCRIPTION The ADG701/ADG702 are monolithic CMOS SPST switches. These switches are designed on an advanced submicron process that provides low power dissipation yet high switching speed, low on resistance, and low leakage currents. In addition, −3 dB bandwidths of greater than 200 MHz ca

CMOS Low Voltage 2 廓 SPST Switches

GENERAL DESCRIPTION The ADG701/ADG702 are monolithic CMOS SPST switches. These switches are designed on an advanced submicron process that provides low power dissipation yet high switching speed, low on resistance, and low leakage currents. In addition, −3 dB bandwidths of greater than 200 MHz ca

CMOS Low Voltage 2ohm SPST Switches

GENERAL DESCRIPTION The ADG701/ADG702 are monolithic CMOS SPST switches. These switches are designed on an advanced submicron process that provides low power dissipation yet high switching speed, low on resistance, and low leakage currents. In addition, −3 dB bandwidths of greater than 200 MHz ca

CMOS Low Voltage 2 廓 SPST Switches

GENERAL DESCRIPTION The ADG701/ADG702 are monolithic CMOS SPST switches. These switches are designed on an advanced submicron process that provides low power dissipation yet high switching speed, low on resistance, and low leakage currents. In addition, −3 dB bandwidths of greater than 200 MHz ca

CMOS Low Voltage 2 廓 SPST Switches

GENERAL DESCRIPTION The ADG701/ADG702 are monolithic CMOS SPST switches. These switches are designed on an advanced submicron process that provides low power dissipation yet high switching speed, low on resistance, and low leakage currents. In addition, −3 dB bandwidths of greater than 200 MHz ca

CMOS Low Voltage 2 廓 SPST Switches

GENERAL DESCRIPTION The ADG701/ADG702 are monolithic CMOS SPST switches. These switches are designed on an advanced submicron process that provides low power dissipation yet high switching speed, low on resistance, and low leakage currents. In addition, −3 dB bandwidths of greater than 200 MHz ca

CMOS Low Voltage 2 廓 SPST Switches

GENERAL DESCRIPTION The ADG701/ADG702 are monolithic CMOS SPST switches. These switches are designed on an advanced submicron process that provides low power dissipation yet high switching speed, low on resistance, and low leakage currents. In addition, −3 dB bandwidths of greater than 200 MHz ca

CMOS 低电压 2 Ω SPST NO 开关

ADG701L/ADG702L 是单片 CMOS SPST 开关。这些开关采用先进的亚微米工艺进行设计，提供低功耗，另外还具有高开关速度、低导通电阻和低漏电流。此外，还可实现大于 200 MHz 的 −3 dB 带宽。\n\n ADG701L/ADG702L 可使用单个 1.8 V 至 5.5 V 电源运行，因此适用于电池供电的仪表，并适合与 ADI 公司的新一代 DAC 和 ADC 配合使用。\n\n 图 1 和图 2 显示了在逻辑输入为 1 的情况下，ADG701L 的开关闭合，而 ADG702L 的开关断开。在接通时，各个开关在两个方向上具有同等的良好传导性能。\n\ • 1.8 V 至 5.5 V 单电源\n\n• 2 Ω 导通电阻（典型值）\n\n• 低导通电阻平坦度\n\n• 高达 85°C 的保证泄漏规格\n\n• –3 dB 带宽 > 200 MHz\n\n• 轨到轨操作;

CMOS Low Voltage 2 OHM SPST Switches

GENERAL DESCRIPTION The ADG701L/ADG702L are monolithic CMOS SPST switches. These switches are designed using an advanced submicron process that provides low power dissipation, yet offers high switching speed, low on resistance, and low leakage currents. In addition, −3 dB bandwidths of greater th

CMOS Low Voltage 2 OHM SPST Switches

GENERAL DESCRIPTION The ADG701L/ADG702L are monolithic CMOS SPST switches. These switches are designed using an advanced submicron process that provides low power dissipation, yet offers high switching speed, low on resistance, and low leakage currents. In addition, −3 dB bandwidths of greater th

CMOS Low Voltage 2 OHM SPST Switches

GENERAL DESCRIPTION The ADG701L/ADG702L are monolithic CMOS SPST switches. These switches are designed using an advanced submicron process that provides low power dissipation, yet offers high switching speed, low on resistance, and low leakage currents. In addition, −3 dB bandwidths of greater th

CMOS Low Voltage 2 OHM SPST Switches

GENERAL DESCRIPTION The ADG701L/ADG702L are monolithic CMOS SPST switches. These switches are designed using an advanced submicron process that provides low power dissipation, yet offers high switching speed, low on resistance, and low leakage currents. In addition, −3 dB bandwidths of greater th

CMOS Low Voltage 2 OHM SPST Switches

GENERAL DESCRIPTION The ADG701L/ADG702L are monolithic CMOS SPST switches. These switches are designed using an advanced submicron process that provides low power dissipation, yet offers high switching speed, low on resistance, and low leakage currents. In addition, −3 dB bandwidths of greater th

CMOS Low Voltage 2 OHM SPST Switches

GENERAL DESCRIPTION The ADG701L/ADG702L are monolithic CMOS SPST switches. These switches are designed using an advanced submicron process that provides low power dissipation, yet offers high switching speed, low on resistance, and low leakage currents. In addition, −3 dB bandwidths of greater th

CMOS Low Voltage 2 OHM SPST Switches

GENERAL DESCRIPTION The ADG701L/ADG702L are monolithic CMOS SPST switches. These switches are designed using an advanced submicron process that provides low power dissipation, yet offers high switching speed, low on resistance, and low leakage currents. In addition, −3 dB bandwidths of greater th

CMOS Low Voltage 2 OHM SPST Switches

GENERAL DESCRIPTION The ADG701L/ADG702L are monolithic CMOS SPST switches. These switches are designed using an advanced submicron process that provides low power dissipation, yet offers high switching speed, low on resistance, and low leakage currents. In addition, −3 dB bandwidths of greater th

CMOS Low Voltage 2 OHM SPST Switches

GENERAL DESCRIPTION The ADG701L/ADG702L are monolithic CMOS SPST switches. These switches are designed using an advanced submicron process that provides low power dissipation, yet offers high switching speed, low on resistance, and low leakage currents. In addition, −3 dB bandwidths of greater th

CMOS Low Voltage 2 OHM SPST Switches

GENERAL DESCRIPTION The ADG701L/ADG702L are monolithic CMOS SPST switches. These switches are designed using an advanced submicron process that provides low power dissipation, yet offers high switching speed, low on resistance, and low leakage currents. In addition, −3 dB bandwidths of greater th

CMOS Low Voltage 2 OHM SPST Switches

GENERAL DESCRIPTION The ADG701L/ADG702L are monolithic CMOS SPST switches. These switches are designed using an advanced submicron process that provides low power dissipation, yet offers high switching speed, low on resistance, and low leakage currents. In addition, −3 dB bandwidths of greater th

CMOS Low Voltage 2 OHM SPST Switches

GENERAL DESCRIPTION The ADG701L/ADG702L are monolithic CMOS SPST switches. These switches are designed using an advanced submicron process that provides low power dissipation, yet offers high switching speed, low on resistance, and low leakage currents. In addition, −3 dB bandwidths of greater th

CMOS Low Voltage 2 OHM SPST Switches

GENERAL DESCRIPTION The ADG701L/ADG702L are monolithic CMOS SPST switches. These switches are designed using an advanced submicron process that provides low power dissipation, yet offers high switching speed, low on resistance, and low leakage currents. In addition, −3 dB bandwidths of greater th

CMOS Low Voltage 2 OHM SPST Switches

GENERAL DESCRIPTION The ADG701L/ADG702L are monolithic CMOS SPST switches. These switches are designed using an advanced submicron process that provides low power dissipation, yet offers high switching speed, low on resistance, and low leakage currents. In addition, −3 dB bandwidths of greater th

CMOS Low Voltage 2 OHM SPST Switches

GENERAL DESCRIPTION The ADG701L/ADG702L are monolithic CMOS SPST switches. These switches are designed using an advanced submicron process that provides low power dissipation, yet offers high switching speed, low on resistance, and low leakage currents. In addition, −3 dB bandwidths of greater th

CMOS Low Voltage 2 OHM SPST Switches

GENERAL DESCRIPTION The ADG701L/ADG702L are monolithic CMOS SPST switches. These switches are designed using an advanced submicron process that provides low power dissipation, yet offers high switching speed, low on resistance, and low leakage currents. In addition, −3 dB bandwidths of greater th

封装/外壳：SC-74A，SOT-753 包装：袋 描述：IC SWITCH SPST SOT23-5 集成电路（IC） 模拟开关，多路复用器，解复用器

CMOS Low Voltage 2 廓 SPST Switches

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CMOS Low Voltage 2 廓 SPST Switches

文件：271.84 Kbytes Page：12 Pages

CMOS Low Voltage 2 廓 SPST Switches

文件：271.84 Kbytes Page：12 Pages

CMOS Low Voltage 2 廓 SPST Switches

文件：271.84 Kbytes Page：12 Pages

CMOS Low Voltage 2 廓 SPST Switches

文件：271.84 Kbytes Page：12 Pages

CMOS Low Voltage 2 廓 SPST Switches

文件：271.84 Kbytes Page：12 Pages

CMOS Low Voltage 2 廓 SPST Switches

文件：271.84 Kbytes Page：12 Pages

CMOS Low Voltage 2 廓 SPST Switches

文件：271.84 Kbytes Page：12 Pages

CMOS Low Voltage 2 廓 SPST Switches

文件：271.84 Kbytes Page：12 Pages

CMOS Low Voltage 2 廓 SPST Switches

文件：271.84 Kbytes Page：12 Pages

CMOS Low Voltage 2 廓 SPST Switches

文件：271.84 Kbytes Page：12 Pages

CMOS Low Voltage 2 廓 SPST Switches

文件：271.84 Kbytes Page：12 Pages

CMOS Low Voltage 2 廓 SPST Switches

文件：271.84 Kbytes Page：12 Pages

CMOS Low Voltage 2 廓 SPST Switches

文件：271.84 Kbytes Page：12 Pages

CMOS Low Voltage 2 廓 SPST Switches

文件：271.84 Kbytes Page：12 Pages

CATV amplifier modules

DESCRIPTION Hybrid amplifier module in a SOT115J package operating at a supply voltage of 24 V (DC). FEATURES • Excellent linearity • Extremely low noise • Silicon nitride passivation • Rugged construction • Gold metallization ensures excellent reliability. APPLICATIONS • CATV systems ope

CATV amplifier module

DESCRIPTION Hybrid high dynamic range cascode amplifier module with darlington pre-stage dies operating at a voltage supply of 24 V (DC). FEATURES • Excellent linearity • Extremely low noise • Silicon nitride passivation • Rugged construction • Gold metallization ensures excellent reliabili

CATV amplifier module

DESCRIPTION Hybrid amplifier module in a SOT115J package operating at a voltage supply of 24 V (DC). FEATURES • Excellent linearity • Extremely low noise • Silicon nitride passivation • Rugged construction • Gold metallization ensures excellent reliability • Mirrored image pinning of the B

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

GaAlAs Semiconductor Laser

文件：40.25 Kbytes Page：2 Pages