CMOS Low Voltage 2 OHM SPST Switches

GENERAL DESCRIPTION The ADG701L/ADG702L are monolithic CMOS SPST switches. These switches are designed using an advanced submicron process that provides low power dissipation, yet offers high switching speed, low on resistance, and low leakage currents. In addition, −3 dB bandwidths of greater th

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ADG701L/ADG702L均为单芯片CMOS单刀单掷（SPST）开关，采用先进的亚微米工艺设计，具有低功耗、高开关速度、低导通电阻和低泄漏电流特性。此外，−3 dB带宽可以达到200 MHz以上。\n\n ADG701L/ADG702L可以采用1.8 V至5.5 V单电源供电，非常适合用在电池供电仪表中，以及配合Analog Devices, Inc.（简称ADI）的新一代DAC和ADC使用。图1和图2显示，当逻辑输入为1时，ADG701L开关闭合，ADG702L开关则断开。接通时，各开关在两个方向的导电性能相同。\n\n ADG701L/ADG702L提供5引脚SOT • 单电源：1.8 V至5.5 V\n\n• 导通电阻：2 Ω（典型值）\n\n• 低导通电阻平坦度\n\n• 在85°C及以下可保证泄漏性能;

CMOS Low Voltage 2 OHM SPST Switches

GENERAL DESCRIPTION The ADG701L/ADG702L are monolithic CMOS SPST switches. These switches are designed using an advanced submicron process that provides low power dissipation, yet offers high switching speed, low on resistance, and low leakage currents. In addition, −3 dB bandwidths of greater th

CMOS Low Voltage 2 OHM SPST Switches

GENERAL DESCRIPTION The ADG701L/ADG702L are monolithic CMOS SPST switches. These switches are designed using an advanced submicron process that provides low power dissipation, yet offers high switching speed, low on resistance, and low leakage currents. In addition, −3 dB bandwidths of greater th

CMOS Low Voltage 2 OHM SPST Switches

GENERAL DESCRIPTION The ADG701L/ADG702L are monolithic CMOS SPST switches. These switches are designed using an advanced submicron process that provides low power dissipation, yet offers high switching speed, low on resistance, and low leakage currents. In addition, −3 dB bandwidths of greater th

CMOS Low Voltage 2 OHM SPST Switches

GENERAL DESCRIPTION The ADG701L/ADG702L are monolithic CMOS SPST switches. These switches are designed using an advanced submicron process that provides low power dissipation, yet offers high switching speed, low on resistance, and low leakage currents. In addition, −3 dB bandwidths of greater th

CMOS Low Voltage 2 OHM SPST Switches

GENERAL DESCRIPTION The ADG701L/ADG702L are monolithic CMOS SPST switches. These switches are designed using an advanced submicron process that provides low power dissipation, yet offers high switching speed, low on resistance, and low leakage currents. In addition, −3 dB bandwidths of greater th

CMOS Low Voltage 2 OHM SPST Switches

GENERAL DESCRIPTION The ADG701L/ADG702L are monolithic CMOS SPST switches. These switches are designed using an advanced submicron process that provides low power dissipation, yet offers high switching speed, low on resistance, and low leakage currents. In addition, −3 dB bandwidths of greater th

CMOS Low Voltage 2 OHM SPST Switches

GENERAL DESCRIPTION The ADG701L/ADG702L are monolithic CMOS SPST switches. These switches are designed using an advanced submicron process that provides low power dissipation, yet offers high switching speed, low on resistance, and low leakage currents. In addition, −3 dB bandwidths of greater th

CMOS Low Voltage 2 OHM SPST Switches

GENERAL DESCRIPTION The ADG701L/ADG702L are monolithic CMOS SPST switches. These switches are designed using an advanced submicron process that provides low power dissipation, yet offers high switching speed, low on resistance, and low leakage currents. In addition, −3 dB bandwidths of greater th

CMOS Low Voltage 2 OHM SPST Switches

GENERAL DESCRIPTION The ADG701L/ADG702L are monolithic CMOS SPST switches. These switches are designed using an advanced submicron process that provides low power dissipation, yet offers high switching speed, low on resistance, and low leakage currents. In addition, −3 dB bandwidths of greater th

CMOS Low Voltage 2 OHM SPST Switches

GENERAL DESCRIPTION The ADG701L/ADG702L are monolithic CMOS SPST switches. These switches are designed using an advanced submicron process that provides low power dissipation, yet offers high switching speed, low on resistance, and low leakage currents. In addition, −3 dB bandwidths of greater th

CMOS Low Voltage 2 OHM SPST Switches

GENERAL DESCRIPTION The ADG701L/ADG702L are monolithic CMOS SPST switches. These switches are designed using an advanced submicron process that provides low power dissipation, yet offers high switching speed, low on resistance, and low leakage currents. In addition, −3 dB bandwidths of greater th

CMOS Low Voltage 2 OHM SPST Switches

GENERAL DESCRIPTION The ADG701L/ADG702L are monolithic CMOS SPST switches. These switches are designed using an advanced submicron process that provides low power dissipation, yet offers high switching speed, low on resistance, and low leakage currents. In addition, −3 dB bandwidths of greater th

CMOS Low Voltage 2 OHM SPST Switches

GENERAL DESCRIPTION The ADG701L/ADG702L are monolithic CMOS SPST switches. These switches are designed using an advanced submicron process that provides low power dissipation, yet offers high switching speed, low on resistance, and low leakage currents. In addition, −3 dB bandwidths of greater th

CMOS Low Voltage 2 OHM SPST Switches

GENERAL DESCRIPTION The ADG701L/ADG702L are monolithic CMOS SPST switches. These switches are designed using an advanced submicron process that provides low power dissipation, yet offers high switching speed, low on resistance, and low leakage currents. In addition, −3 dB bandwidths of greater th

CMOS Low Voltage 2 OHM SPST Switches

GENERAL DESCRIPTION The ADG701L/ADG702L are monolithic CMOS SPST switches. These switches are designed using an advanced submicron process that provides low power dissipation, yet offers high switching speed, low on resistance, and low leakage currents. In addition, −3 dB bandwidths of greater th

CMOS Low Voltage 2 OHM SPST Switches

GENERAL DESCRIPTION The ADG701L/ADG702L are monolithic CMOS SPST switches. These switches are designed using an advanced submicron process that provides low power dissipation, yet offers high switching speed, low on resistance, and low leakage currents. In addition, −3 dB bandwidths of greater th

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Silicon Hot-Carrier Diodes Schottky Barrier Diodes These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low–cost, hig

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PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

LOW-POWER DUAL C-MOS OPERATIONAL AMPLIFIER???

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LOW-POWER TINY SINGLE C-MOS OPERATIONAL AMPLIFIER?

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LOW-POWER DUAL C-MOS OPERATIONAL AMPLIFIER???

文件：264.28 Kbytes Page：9 Pages