1 pC Charge Injection, 100 pA Leakage CMOS 5 V/5 V/3 V Dual SPDT Switch

GENERAL DESCRIPTION The ADG636 is a monolithic device, comprising two independently selectable CMOS single pole, double throw (SPDT) switches. When on, each switch conducts equally well in both directions. The ADG636 operates from a dual ±2.7 V to ±5.5 V supply, or from a single supply of +2.7

1 pC Charge Injection, 100 pA Leakage

文件：498.96 Kbytes Page：16 Pages

1 pC Charge Injection, 100 pA Leakage CMOS 5 V/5 V/3 V Dual SPDT Switch

GENERAL DESCRIPTION The ADG636 is a monolithic device, comprising two independently selectable CMOS single pole, double throw (SPDT) switches. When on, each switch conducts equally well in both directions. The ADG636 operates from a dual ±2.7 V to ±5.5 V supply, or from a single supply of +2.7

1 pC Charge Injection, 100 pA Leakage, CMOS, 짹5 V/5 V/3 V Dual SPDT Switch

GENERAL DESCRIPTION The ADG636 is a monolithic device, comprising two independently selectable CMOS single pole, double throw (SPDT) switches. When on, each switch conducts equally well in both directions. The ADG636 operates from a dual ±2.7 V to ±5.5 V supply, or from a single supply of +2.7

1 pC Charge Injection, 100 pA Leakage, CMOS, 짹5 V/5 V/3 V Dual SPDT Switch

GENERAL DESCRIPTION The ADG636 is a monolithic device, comprising two independently selectable CMOS single pole, double throw (SPDT) switches. When on, each switch conducts equally well in both directions. The ADG636 operates from a dual ±2.7 V to ±5.5 V supply, or from a single supply of +2.7

1 pC Charge Injection, 100 pA Leakage, CMOS, 짹5 V/5 V/3 V Dual SPDT Switch

GENERAL DESCRIPTION The ADG636 is a monolithic device, comprising two independently selectable CMOS single pole, double throw (SPDT) switches. When on, each switch conducts equally well in both directions. The ADG636 operates from a dual ±2.7 V to ±5.5 V supply, or from a single supply of +2.7

1 pC Charge Injection, 100 pA Leakage, CMOS, 짹5 V/5 V/3 V Dual SPDT Switch

GENERAL DESCRIPTION The ADG636 is a monolithic device, comprising two independently selectable CMOS single pole, double throw (SPDT) switches. When on, each switch conducts equally well in both directions. The ADG636 operates from a dual ±2.7 V to ±5.5 V supply, or from a single supply of +2.7

1 pC Charge Injection, 100 pA Leakage, CMOS, 짹5 V/5 V/3 V Dual SPDT Switch

GENERAL DESCRIPTION The ADG636 is a monolithic device, comprising two independently selectable CMOS single pole, double throw (SPDT) switches. When on, each switch conducts equally well in both directions. The ADG636 operates from a dual ±2.7 V to ±5.5 V supply, or from a single supply of +2.7

1 pC Charge Injection, 100 pA Leakage

文件：498.96 Kbytes Page：16 Pages

Bright back lit LCD

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