1 pC Charge Injection, 100 pA Leakage CMOS 5 V/5 V/3 V Dual SPDT Switch

GENERAL DESCRIPTION The ADG636 is a monolithic device, comprising two independently selectable CMOS single pole, double throw (SPDT) switches. When on, each switch conducts equally well in both directions. The ADG636 operates from a dual ±2.7 V to ±5.5 V supply, or from a single supply of +2.7

1 PC电荷注入、100 PA泄露、CMOS、±5 V/+5 V/+3 V双通道单刀双掷开关

ADG636是一款单芯片器件，内置两个独立可选的CMOS单刀双掷(SPDT)开关。接通时，各开关在两个方向的导电性能相同。\n\n ADG636采用±2.7 V至±5.5 V双电源或+2.7 V至+5.5 V单电源供电。\n\n 此开关在整个信号范围内具有±1.5 pC的超低电荷注入，25°C时的典型漏电流为10 pA。此外，它的典型导通电阻为85 Ω，两个通道间的匹配在2 Ω以内。它还具有低功耗和高开关速度特性。\n\n ADG636为先开后合式开关，采用14引脚TSSOP封装。\n\n产品聚焦1. 超低电荷注入。QINJ：±1.5 pC（典型值，整个信号范围） • 1 pC 电荷注入\n• ±2.7 V至±5.5 V双电源供电\n• +2.7 V至+5.5 V单电源供电\n• 汽车应用温度范围： \n• 100 pA（最大值，25°C）漏电流\n• 导通电阻：85 Ω典型值\n• 轨到轨工作\n• 快速开关时间\n• 典型功耗：;

1 pC Charge Injection, 100 pA Leakage

文件：498.96 Kbytes Page：16 Pages

1 pC Charge Injection, 100 pA Leakage CMOS 5 V/5 V/3 V Dual SPDT Switch

GENERAL DESCRIPTION The ADG636 is a monolithic device, comprising two independently selectable CMOS single pole, double throw (SPDT) switches. When on, each switch conducts equally well in both directions. The ADG636 operates from a dual ±2.7 V to ±5.5 V supply, or from a single supply of +2.7

1 pC Charge Injection, 100 pA Leakage, CMOS, 짹5 V/5 V/3 V Dual SPDT Switch

GENERAL DESCRIPTION The ADG636 is a monolithic device, comprising two independently selectable CMOS single pole, double throw (SPDT) switches. When on, each switch conducts equally well in both directions. The ADG636 operates from a dual ±2.7 V to ±5.5 V supply, or from a single supply of +2.7

1 pC Charge Injection, 100 pA Leakage, CMOS, 짹5 V/5 V/3 V Dual SPDT Switch

GENERAL DESCRIPTION The ADG636 is a monolithic device, comprising two independently selectable CMOS single pole, double throw (SPDT) switches. When on, each switch conducts equally well in both directions. The ADG636 operates from a dual ±2.7 V to ±5.5 V supply, or from a single supply of +2.7

1 pC Charge Injection, 100 pA Leakage, CMOS, 짹5 V/5 V/3 V Dual SPDT Switch

GENERAL DESCRIPTION The ADG636 is a monolithic device, comprising two independently selectable CMOS single pole, double throw (SPDT) switches. When on, each switch conducts equally well in both directions. The ADG636 operates from a dual ±2.7 V to ±5.5 V supply, or from a single supply of +2.7

1 pC Charge Injection, 100 pA Leakage, CMOS, 짹5 V/5 V/3 V Dual SPDT Switch

GENERAL DESCRIPTION The ADG636 is a monolithic device, comprising two independently selectable CMOS single pole, double throw (SPDT) switches. When on, each switch conducts equally well in both directions. The ADG636 operates from a dual ±2.7 V to ±5.5 V supply, or from a single supply of +2.7

1 pC Charge Injection, 100 pA Leakage, CMOS, 짹5 V/5 V/3 V Dual SPDT Switch

GENERAL DESCRIPTION The ADG636 is a monolithic device, comprising two independently selectable CMOS single pole, double throw (SPDT) switches. When on, each switch conducts equally well in both directions. The ADG636 operates from a dual ±2.7 V to ±5.5 V supply, or from a single supply of +2.7

1 pC Charge Injection, 100 pA Leakage

文件：498.96 Kbytes Page：16 Pages

PHASE CONTROL THYRISTOR

PHASE CONTROL THYRISTOR Repetitive voltage up to 1800 V Mean on-state current 1965 A Surge current 36 kA

High Current Transistors

High Current Transistors PNP Silicon

High Current Transistors(PNP Silicon)

High Current Transistors PNP Silicon

PNP medium power transistors

DESCRIPTION PNP medium power transistor in a TO-92; SOT54 plastic package. NP complements: BC635, BC637 and BC639. FEATURES • High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • Audio and video amplifiers.

Low voltage high performance mixer FM IF system with high-speed RSSI

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