1 Ω 导通电阻、 ±15 V/+12 V/±5 V, iCMOS单刀单掷开关

ADG1401/ADG1402内置一个单刀单掷（SPST）开关。图1显示，当逻辑输入为1时，ADG1401开关闭合，ADG1402开关则断开。当接通时，各开关在两个方向的导电性能相同，输入信号范围可扩展至电源电压范围。在断开条件下，等于电源电压的信号电平被阻止。\n\n iCMOS®（工业CMOS）是一种模块式制造工艺，集高电压CMOS（互补金属氧化物半导体）与双极性技术于一体。通过这种工艺，可开发在33V高压下工作的高性能模拟IC，其体积性能比是其它高压器件所无法实现的。与采用传统CMOS工艺的模拟IC不同，iCMOS器件不但可以承受高电源电压，同时还能提升性能、大幅降低功耗并减小 • 导通电阻：1 Ω\n\n• 导通电阻平坦度：0.2 Ω\n\n• 连续电流最高达435 mA\n\n• 额定电源电压：+12 V、±15 V、\n±5 V;

1 廓 On Resistance, 짹15 V/12 V/짹5 V iCMOS SPST Switches

文件：447.51 Kbytes Page：16 Pages

1 廓 On Resistance, 짹15 V/12 V/짹5 V iCMOS SPST Switches

文件：447.51 Kbytes Page：16 Pages

1 廓 On Resistance, 짹15 V/12 V/짹5 V iCMOS SPST Switches

文件：447.51 Kbytes Page：16 Pages

1 廓 On Resistance, 짹15 V/12 V/짹5 V iCMOS SPST Switches

文件：447.51 Kbytes Page：16 Pages

NPN general purpose transistor

DESCRIPTION NPN transistor in a plastic TO-92; SOT54 package. PNP complement: ED1602. FEATURES • Low current (max. 200 mA) • Low voltage (max. 20 V) • High gain. APPLICATIONS • General purpose switching and amplification.

NPN general purpose transistor

DESCRIPTION NPN transistor in a plastic TO-92; SOT54 package. PNP complement: ED1602. FEATURES • Low current (max. 200 mA) • Low voltage (max. 20 V) • High gain. APPLICATIONS • General purpose switching and amplification.

NPN general purpose transistor

DESCRIPTION NPN transistor in a plastic TO-92; SOT54 package. PNP complement: ED1602. FEATURES • Low current (max. 200 mA) • Low voltage (max. 20 V) • High gain. APPLICATIONS • General purpose switching and amplification.

Integtrated Circuit Electronic Channel Selector

Description The NTE1402 is an integrated circuit in a 24–Lead DIP type package designed for electronic tuner by the preset volume method. Features • Simplifies Selection Circuit up to 16 Channels • Incorporating Clock Oscillator, Input Control, UP–DOWN Counter and Decoder Circuit

Integrated Photosensors

文件：48.77 Kbytes Page：2 Pages