1 Ω 导通电阻、 ±15 V/+12 V/±5 V, iCMOS单刀单掷开关

ADG1401/ADG1402内置一个单刀单掷（SPST）开关。图1显示，当逻辑输入为1时，ADG1401开关闭合，ADG1402开关则断开。当接通时，各开关在两个方向的导电性能相同，输入信号范围可扩展至电源电压范围。在断开条件下，等于电源电压的信号电平被阻止。\n\n iCMOS®（工业CMOS）是一种模块式制造工艺，集高电压CMOS（互补金属氧化物半导体）与双极性技术于一体。通过这种工艺，可开发在33V高压下工作的高性能模拟IC，其体积性能比是其它高压器件所无法实现的。与采用传统CMOS工艺的模拟IC不同，iCMOS器件不但可以承受高电源电压，同时还能提升性能、大幅降低功耗并减小 • 导通电阻：1 Ω\n\n• 导通电阻平坦度：0.2 Ω\n\n• 连续电流最高达435 mA\n\n• 额定电源电压：+12 V、±15 V、\n±5 V;

1 廓 On Resistance, 짹15 V/12 V/짹5 V iCMOS SPST Switches

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1 廓 On Resistance, 짹15 V/12 V/짹5 V iCMOS SPST Switches

文件：447.51 Kbytes Page：16 Pages

1 廓 On Resistance, 짹15 V/12 V/짹5 V iCMOS SPST Switches

文件：447.51 Kbytes Page：16 Pages

1 廓 On Resistance, 짹15 V/12 V/짹5 V iCMOS SPST Switches

文件：447.51 Kbytes Page：16 Pages

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetim

Silicon PNP epitaxial planer transistor

Silicon PNP epitaxial planer transistor For general amplification ■ Features ● Two elements incorporated into one package. (Emitter-coupled transistors) ● Reduction of the mounting area and assembly cost by one half.

Silicon PNP epitaxial planer transistor

Silicon PNP epitaxial planar type For general amplification ■ Features • Two elements incorporated into one package (Emitter-coupled transistors) • Reduction of the mounting area and assembly cost by one half

Silicon NPN Phototransistors

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Power plug for the universal mains

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