ADE7754

GENERAL DESCRIPTION The ADE7754 is a high accuracy polyphase electrical energy measurement IC with a serial interface and a pulse output. The ADE7754 incorporates second order Σ-∆ ADCs, reference circuitry, temperature sensor, and all the signal processing required to perform active, apparent ene

提供串行端口的多相位、 多功能电能计量IC

ADE7754是电力行业首款数字校准、多功能电能计量IC ， 可通过编程支持所有类型的三相电网配置 。 这款单芯片解决方案可测量有功和视在功率 ， 并提供串行端口接口和脉冲输出 。 ADE7754传感器接口使用三路完全差分电流输入和三路单端电压输入 。 6个ADC对信号进行数字化处理 ， 所有信号处理都在数字域完成 ， 可实现出色的稳定性和精度 。 ADE7754包含基准电压源电路、温度传感器及所有必需的信号处理电路 ， 可执行有功和视在功率测量以及电流和电压通道均方根值的计算。它还能执行电能质量测量。 ADE7754超过了IEC61036/60687标准的精度要求，并提供一个SPI • 超过IEC61036/60687标准要求 \n• 在1000:1的动态范围内有功功率测量误差小于0.1% \n• 有功和视在功率、 Vrms和Irms 测量 \n• 高频脉冲输出 \n• 电压SAG和零交越\n电流和电压峰值\n反向有功功率\n频率/周期测量\n• 片内温度传感器和基准电压源(2.4 V) \n• 低功耗：50mW（典型值） ;

Poly-phase Multi-Function Energy Metering IC with Serial Port

文件：630.78 Kbytes Page：44 Pages

ADE7754

GENERAL DESCRIPTION The ADE7754 is a high accuracy polyphase electrical energy measurement IC with a serial interface and a pulse output. The ADE7754 incorporates second order Σ-∆ ADCs, reference circuitry, temperature sensor, and all the signal processing required to perform active, apparent ene

ADE7754

GENERAL DESCRIPTION The ADE7754 is a high accuracy polyphase electrical energy measurement IC with a serial interface and a pulse output. The ADE7754 incorporates second order Σ-∆ ADCs, reference circuitry, temperature sensor, and all the signal processing required to perform active, apparent ene

Polyphase Multifunction Energy Metering IC with Serial Port

文件：530.82 Kbytes Page：44 Pages

Poly-phase Multi-Function Energy Metering IC with Serial Port

文件：630.78 Kbytes Page：44 Pages

Poly-phase Multi-Function Energy Metering IC with Serial Port

文件：630.78 Kbytes Page：44 Pages

封装/外壳：24-SOIC（0.295"，7.50mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC ENERGY METERING 3PHASE 24SOIC 集成电路（IC） 电能计量

封装/外壳：24-SOIC（0.295"，7.50mm 宽） 包装：管件 描述：IC ENERGY METERING 3PHASE 24SOIC 集成电路（IC） 电能计量

Power MOSFET(Vdss=-12V)

Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for,provides thedesigner with an extr