16-Bit, 1 MSPS, 8-Channel Data Acquisition System

GENERAL DESCRIPTION The ADAS3022 is a complete 16-bit, 1 MSPS, successive approximation based analog-to-digital data acquisition system, which is manufactured on Analog Devices, Inc., proprietary iCMOS® high voltage industrial process technology. The device integrates an 8-channel, low leakage mu

16位、1 MSPS、8通道数据采集系统

ADAS3022是一款完整的16位、1 MSPS、逐次逼近型模数数据采集系统，采用ADI公司专有的i CMOS®高压工业过程技术制造。该器件集成8通道、低泄漏多路复用器；具有高共模抑制的高阻抗可编程增益仪器仪表放大器(PGIA)级；精密、低漂移4.096 V基准电压源和缓冲器；以及采用逐次逼近型寄存器(SAR)架构的16位电荷再分配模数转换器(ADC)。使用±15 V电源时，ADAS3022可解析最高为±24.576 V的八路单端输入或四路全差分输入。此外，该器件可以接受常用的双极性差分、双极性单端、伪双极性或伪单极性输入信号，如表1所示，因此几乎可以使用任何直接传感器接口。\n\n • 易于使用，单端转差分电路\n\n• 可调输出共模电压\n\n• 外部可调增益\n\n• 低谐波失真\n• SFDR：-94 dBc (5 MHz)\n\n• SFDR：-85 dBc (20 MHz)\n\n\n\n\n• -3 dB带宽：320 MHz (G = +1)\n\n• 0.01%快速建立时间：16 ns\n\n• 压摆率：1150 V/μs\n\n• 快速过驱恢复：4 ns\n\n• 低输入电压噪声：5 nV/√Hz\n\n• 欲了解更多特性，请参考数据手册;

16-Bit, 1 MSPS, 8-Channel Data Acquisition System

GENERAL DESCRIPTION The ADAS3022 is a complete 16-bit, 1 MSPS, successive approximation based analog-to-digital data acquisition system, which is manufactured on Analog Devices, Inc., proprietary iCMOS® high voltage industrial process technology. The device integrates an 8-channel, low leakage mu

16-Bit, 1 MSPS, 8-Channel Data Acquisition System

GENERAL DESCRIPTION The ADAS3022 is a complete 16-bit, 1 MSPS, successive approximation based analog-to-digital data acquisition system, which is manufactured on Analog Devices, Inc., proprietary iCMOS® high voltage industrial process technology. The device integrates an 8-channel, low leakage mu

封装/外壳：40-VFQFN 裸露焊盘，CSP 包装：管件 描述：IC ADC 16BIT SAR 40LFCSP 集成电路（IC） 模数转换器（ADC）

封装/外壳：48-LQFP 包装：管件 描述：IC ADC 16BIT SAR 48LQFP 集成电路（IC） 模数转换器（ADC）

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

NPN SILICON UHF POWER TRANSISTOR

The TP3022B is designed for common–emitter operation in the 900 MHz mobile radio band. Use of gold metallization and silicon diffused ballast resistors results in a medium power output/driver transistor with state–of–the–art ruggedness and reliability. • Specified 26 Volts, 960 MHz Characteristic

NPN SILICON UHF POWER TRANSISTOR

The TP3022B is designed for common–emitter operation in the 900 MHz mobile radio band. Use of gold metallization and silicon diffused ballast resistors results in a medium power output/driver transistor with state–of–the–art ruggedness and reliability. • Specified 26 Volts, 960 MHz Characteristic

6-Pin DIP Random-Phase Optoisolators Triac Driver Output

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60 Voice smart with LCD

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