Ultralow Distortion, Wide Bandwidth Voltage Feedback Op Amps

GENERAL DESCRIPTION The AD9631 and AD9632 are very high speed and wide band width amplifiers. They are an improved performance alternative to the AD9621 and AD9622. The AD9631 is unity gain stable. The AD9632 is stable at gains of 2 or greater. Using a voltage feedback architecture, the AD9631/AD

Ultralow Distortion, Wide Bandwidth Voltage Feedback Op Amps

GENERAL DESCRIPTION The AD9631 and AD9632 are very high speed and wide band width amplifiers. They are an improved performance alternative to the AD9621 and AD9622. The AD9631 is unity gain stable. The AD9632 is stable at gains of 2 or greater. Using a voltage feedback architecture, the AD9631/AD

Ultralow Distortion, Wide BandwidthVoltage Feedback Op Amps

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Ultralow Distortion, Wide Bandwidth Voltage Feedback Op Amps

文件：635.45 Kbytes Page：20 Pages

Ultralow Distortion, Wide Bandwidth Voltage Feedback Op Amps

FEATURES Wide bandwidth AD9631, G = +1 AD9632, G = +2 Small signal AD9631, 320 MHz AD9632, 250 MHz Large signal (4 V p-p) AD9631, 175 MHz AD9632, 180 MHz Ultralow distortion (SFDR), low noise −113 dBc typical @ 1 MHz −95 dBc typical @ 5 MHz −72 dBc typical @ 20 MHz 46 dBm third-order intercep

Ultralow Distortion, Wide Bandwidth Voltage Feedback Op Amps

GENERAL DESCRIPTION The AD9631 and AD9632 are very high speed and wide band width amplifiers. They are an improved performance alternative to the AD9621 and AD9622. The AD9631 is unity gain stable. The AD9632 is stable at gains of 2 or greater. Using a voltage feedback architecture, the AD9631/AD

Ultralow Distortion, Wide Bandwidth Voltage Feedback Op Amps

文件：635.45 Kbytes Page：20 Pages

FSTN Transflective LCD, TAB IC, TCP package Built-in controller SED1530Taa

Feature 1. FSTN Transflective LCD, TAB IC, TCP package 2. Built-in controller SED1530Taa 3. 1/32 duty cycle 4. +3V ~ +5V power supply 5. On chip LCD booster

P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability