Dual Picoampere Input Current Bipolar Op Amp

GENERAL DESCRIPTION The AD706 is a dual, low power, bipolar op amp that has the low input bias current of a JFET amplifier, but which offers a significantly lower IB drift over temperature. It utilizes superbeta bipolar input transistors to achieve picoampere input bias current levels (similar to

Dual Picoampere Input Current Bipolar Op Amp

FEATURES High DC Precision 100
V Max Offset Voltage 1.5
V/C Max Offset Drift 200 pA Max Input Bias Current 0.5
V p-p Voltage Noise, 0.1 Hz to 10 Hz 750
A Supply Current Available in 8-Lead PDlP and Surface-Mount (SOIC) Packages Available in Tape and Reel in Accordance with EIA-481A

Dual Picoampere Input Current Bipolar Op Amp

文件：182.29 Kbytes Page：12 Pages

Dual Picoampere Input Current Bipolar Op Amp

GENERAL DESCRIPTION The AD706 is a dual, low power, bipolar op amp that has the low input bias current of a JFET amplifier, but which offers a significantly lower IB drift over temperature. It utilizes superbeta bipolar input transistors to achieve picoampere input bias current levels (similar to

Dual Picoampere Input Current Bipolar Op Amp

GENERAL DESCRIPTION The AD706 is a dual, low power, bipolar op amp that has the low input bias current of a JFET amplifier, but which offers a significantly lower IB drift over temperature. It utilizes superbeta bipolar input transistors to achieve picoampere input bias current levels (similar to

Dual Picoampere Input Current Bipolar Op Amp

GENERAL DESCRIPTION The AD706 is a dual, low power, bipolar op amp that has the low input bias current of a JFET amplifier, but which offers a significantly lower IB drift over temperature. It utilizes superbeta bipolar input transistors to achieve picoampere input bias current levels (similar to

Dual Picoampere Input Current Bipolar Op Amp

GENERAL DESCRIPTION The AD706 is a dual, low power, bipolar op amp that has the low input bias current of a JFET amplifier, but which offers a significantly lower IB drift over temperature. It utilizes superbeta bipolar input transistors to achieve picoampere input bias current levels (similar to

Dual Picoampere Input Current Bipolar Op Amp

FEATURES High DC Precision 100
V Max Offset Voltage 1.5
V/C Max Offset Drift 200 pA Max Input Bias Current 0.5
V p-p Voltage Noise, 0.1 Hz to 10 Hz 750
A Supply Current Available in 8-Lead PDlP and Surface-Mount (SOIC) Packages Available in Tape and Reel in Accordance with EIA-481A

Dual Picoampere Input Current Bipolar Op Amp

FEATURES High DC Precision 100
V Max Offset Voltage 1.5
V/C Max Offset Drift 200 pA Max Input Bias Current 0.5
V p-p Voltage Noise, 0.1 Hz to 10 Hz 750
A Supply Current Available in 8-Lead PDlP and Surface-Mount (SOIC) Packages Available in Tape and Reel in Accordance with EIA-481A

Dual Picoampere Input Current Bipolar Op Amp

文件：182.29 Kbytes Page：12 Pages

High Voltage Input Amplifier Circuit for Hi-Fi Power Amplifier

■ Overview The AN7062N is a high voltage integrated circuit designed for pre-driver of 60W-class Hi-Fi audio amp. Stereo operation is enabled due to two amplifiers built-in. ■ Features • High voltage • Low noise : Vni = 2.5µV (typ.) • Low distortion : THD = 0.003 (typ.) • Good channel separa

PHASE CONTROL THYRISTOR

PHASE CONTROL THYRISTOR Repetitive voltage up to 800 V Mean on-state current 4305 A Surge current 70 kA

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Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors . . . PNPN devices designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where reliability of operation is critical. • Small Size • P

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE ROHS COMPLIANT General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances resu