Low Level, True RMS-to-DC Converter

GENERAL DESCRIPTION The AD636 is a low power monolithic IC that performs true rms-to-dc conversion on low level signals. It offers performance that is comparable or superior to that of hybrid and modular converters costing much more. The AD636 is specified for a signal range of 0 mV to 200 mV rms

Low Level, True RMS-to-DC Converter

FEATURES True rms-to-dc conversion 200 mV full scale Laser-trimmed to high accuracy 0.5% maximum error (AD636K) 1.0% maximum error (AD636J) Wide response capability Computes rms of ac and dc signals 1 MHz, −3 dB bandwidth: V rms > 100 mV Signal crest factor of 6 for 0.5% error

低电平真均方根直流转换器

AD636是一款对低电平信号执行真均方根直流转换的低功耗单芯片IC，其性能与成本更高的混合及模块式转换器相当或更佳。AD636的额定信号范围为0 mV至200 mV均方根值，波峰因素最高可达6，额外误差小于0.5%，可以精确测量复杂的输入波形。\n\n AD636的电源电流要求较低，通常只有800 μA，非常适合电池供电的便携式仪表。它可采用±2.5 V至±16.5 V或+5 V至+24 V的各种双电源和单电源供电。输入和输出端得到保护；即使输入信号超过电源电压也不会损坏器件（无电源电压时也可存在输入信号），输出缓冲放大器也有短路保护。\n\n AD636包括一个从 • 通过激光调整实现高精度\nAD636K最大误差：0.5% \nAD636J最大误差：1.0% \n\n• 宽响应能力\n计算交流和直流信号的均方根值\n1 MHz，−3 dB带宽：V rms > 100 mV\n信号波峰因素为6时误差0.5%\n\n• 真均方根直流转换 \n\n• 200 mV 满量程;

Low Level, True RMS-to-DC Converter

FEATURES True rms-to-dc conversion 200 mV full scale Laser-trimmed to high accuracy 0.5% maximum error (AD636K) 1.0% maximum error (AD636J) Wide response capability Computes rms of ac and dc signals 1 MHz, −3 dB bandwidth: V rms > 100 mV Signal crest factor of 6 for 0.5% error

Low Level, True RMS-to-DC Converter

GENERAL DESCRIPTION The AD636 is a low power monolithic IC that performs true rms-to-dc conversion on low level signals. It offers performance that is comparable or superior to that of hybrid and modular converters costing much more. The AD636 is specified for a signal range of 0 mV to 200 mV rms

Low Level, True RMS-to-DC Converter

GENERAL DESCRIPTION The AD636 is a low power monolithic IC that performs true rms-to-dc conversion on low level signals. It offers performance that is comparable or superior to that of hybrid and modular converters costing much more. The AD636 is specified for a signal range of 0 mV to 200 mV rms

Low Level, True RMS-to-DC Converter

FEATURES True rms-to-dc conversion 200 mV full scale Laser-trimmed to high accuracy 0.5% maximum error (AD636K) 1.0% maximum error (AD636J) Wide response capability Computes rms of ac and dc signals 1 MHz, −3 dB bandwidth: V rms > 100 mV Signal crest factor of 6 for 0.5% error

Low Level, True RMS-to-DC Converter

FEATURES True rms-to-dc conversion 200 mV full scale Laser-trimmed to high accuracy 0.5% maximum error (AD636K) 1.0% maximum error (AD636J) Wide response capability Computes rms of ac and dc signals 1 MHz, −3 dB bandwidth: V rms > 100 mV Signal crest factor of 6 for 0.5% error

Low Level, True RMS-to-DC Converter

GENERAL DESCRIPTION The AD636 is a low power monolithic IC that performs true rms-to-dc conversion on low level signals. It offers performance that is comparable or superior to that of hybrid and modular converters costing much more. The AD636 is specified for a signal range of 0 mV to 200 mV rms

Low Level, True RMS-to-DC Converter

FEATURES True rms-to-dc conversion 200 mV full scale Laser-trimmed to high accuracy 0.5% maximum error (AD636K) 1.0% maximum error (AD636J) Wide response capability Computes rms of ac and dc signals 1 MHz, −3 dB bandwidth: V rms > 100 mV Signal crest factor of 6 for 0.5% error

Low Level, True RMS-to-DC Converter

GENERAL DESCRIPTION The AD636 is a low power monolithic IC that performs true rms-to-dc conversion on low level signals. It offers performance that is comparable or superior to that of hybrid and modular converters costing much more. The AD636 is specified for a signal range of 0 mV to 200 mV rms

Low Level, True RMS-to-DC Converter

GENERAL DESCRIPTION The AD636 is a low power monolithic IC that performs true rms-to-dc conversion on low level signals. It offers performance that is comparable or superior to that of hybrid and modular converters costing much more. The AD636 is specified for a signal range of 0 mV to 200 mV rms

Low Level, True RMS-to-DC Converter

FEATURES True rms-to-dc conversion 200 mV full scale Laser-trimmed to high accuracy 0.5% maximum error (AD636K) 1.0% maximum error (AD636J) Wide response capability Computes rms of ac and dc signals 1 MHz, −3 dB bandwidth: V rms > 100 mV Signal crest factor of 6 for 0.5% error

Low Level, True RMS-to-DC Converter

FEATURES True rms-to-dc conversion 200 mV full scale Laser-trimmed to high accuracy 0.5% maximum error (AD636K) 1.0% maximum error (AD636J) Wide response capability Computes rms of ac and dc signals 1 MHz, −3 dB bandwidth: V rms > 100 mV Signal crest factor of 6 for 0.5% error

Low Level, True RMS-to-DC Converter

GENERAL DESCRIPTION The AD636 is a low power monolithic IC that performs true rms-to-dc conversion on low level signals. It offers performance that is comparable or superior to that of hybrid and modular converters costing much more. The AD636 is specified for a signal range of 0 mV to 200 mV rms

Low Level, True RMS-to-DC Converter

FEATURES True rms-to-dc conversion 200 mV full scale Laser-trimmed to high accuracy 0.5% maximum error (AD636K) 1.0% maximum error (AD636J) Wide response capability Computes rms of ac and dc signals 1 MHz, −3 dB bandwidth: V rms > 100 mV Signal crest factor of 6 for 0.5% error

Low Level, True RMS-to-DC Converter

文件：444.66 Kbytes Page：16 Pages

Low Level, True RMS-to-DC Converter

文件：677.06 Kbytes Page：17 Pages

封装/外壳：14-CDIP（0.300"，7.62mm） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC RMS TO DC CONVERTER 14CDIP 集成电路（IC） RMS 至 DC 转换器

Low Level, True RMS-to-DC Converter

文件：444.66 Kbytes Page：16 Pages

Low Level, True RMS-to-DC Converter

文件：444.66 Kbytes Page：16 Pages

Low Level, True RMS-to-DC Converter

文件：444.66 Kbytes Page：16 Pages

封装/外壳：TO-100-10 金属罐 包装：管件 描述：IC RMS TO DC CONVERTER TO100-10 集成电路（IC） RMS 至 DC 转换器

Low Level, True RMS-to-DC Converter

文件：444.66 Kbytes Page：16 Pages

Low Level, True RMS-to-DC Converter

文件：444.66 Kbytes Page：16 Pages

Low Level, True RMS-to-DC Converter

文件：444.66 Kbytes Page：16 Pages

PHASE CONTROL THYRISTOR

PHASE CONTROL THYRISTOR Repetitive voltage up to 1800 V Mean on-state current 1965 A Surge current 36 kA

High Current Transistors

High Current Transistors PNP Silicon

High Current Transistors(PNP Silicon)

High Current Transistors PNP Silicon

PNP medium power transistors

DESCRIPTION PNP medium power transistor in a TO-92; SOT54 plastic package. NP complements: BC635, BC637 and BC639. FEATURES • High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • Audio and video amplifiers.

Low voltage high performance mixer FM IF system with high-speed RSSI

文件：173.4 Kbytes Page：17 Pages