封装/外壳：模块 包装：卷带（TR） 描述：438-473 MHZ / 487-512 MHZ CAVITY RF/IF，射频/中频和 RFID 射频多路复用器

438-473 MHz / 487-512 MHz Cavity Duplexer

PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general purpose switching applications.

NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR

FEATURES * 140 Volt VCEO * 1 Amp continuous current * Ptot= 500 mW

Linear Output Type OPIC Light Detector

■ Features 1. Liner output 2. Two package according to mounting method Side-view type (IS445) Top-view type (IS455) 3. Capable of output voltage level adjustment due to external resistor ■ Applications 1. Copiers

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon Power Transistor . . . designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 60 Watts Minimum Gain = 13 dB Efficiency = 55

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

FEATURES * 140 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt