isc Silicon PNP Power Transistor

DESCRIPTION • Wide Area of Safe Operation • DC Current Gain- : hFE=30-100@IC= -1A • Collector-Emitter Saturation Voltage- : VCE(sat)= -0.7V(Max)@ IC= -3A • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for general-purpose power swi

PNP Transistors for AF power stages up to 20 W

PNP Transistors for AF power stages up to 20 W AD 149 and AD 150 are germanium PNP alloyed transistors in a TO-3 package. The collector is electrically connected to the case. For insulated mounting of these transistors on a chassis, the insulating parts Q 62901-B 11-A and Q 62901-B 13-B are provi

GERMANIUM POWER TRANSISTORS

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PNP 5 GHz wideband transistor

DESCRIPTION PNP transistor in a SOT89 envelope. It is intended for use in UHF applications such as broadband aerial amplifiers (30 to 860 MHz) and in microwave amplifiers such as radar systems, spectrum analyzers, etc., using SMD technology.

Thyristors logic level

GENERAL DESCRIPTION Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger

Thyristors logic level

GENERAL DESCRIPTION Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger

Thyristors logic level

GENERAL DESCRIPTION Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger

Quad 741 Op Amps LM149 Wide Band Decompensated (AV MIN = 5)

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