POWER TRANSISTORS COMPLEMENTARY SILICON

Complementary Plastic Silicon Power Transistors These devices are designed for lower power audio amplifier and low current, high−speed switching applications. Features • Low Collector−Emitter Sustaining Voltage − VCEO(sus)60 Vdc (Min) • High Current−Gain − Bandwidth Product fT=

Complementary Plastic Silicon Power Transistors

BD787 -> NPN BD788 -> PNP 4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 15 WATTS . . . designedfor lower power audio amplifier and lowcurrent, high–speed switching applications. • Low Collector–Emitter Sustaining Voltage VCEO(sus)60 Vdc (Min) — BD787, BD78

CATV amplifier module

General description Hybrid high dynamic range amplifier module in a SOT115J package operating at a supply voltage of 24 V (DC). The module consists of two cascaded stages both in cascode configuration. Features ■ Excellent linearity ■ Extremely low noise ■ High gain ■ Excellent return loss p

PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

FEATURES * Low equivalent on-resistance; RCE(sat) 93mΩ at 3A * Gain of 300 at IC=2 Amps and Very low saturation voltage APPLICATIONS * Battery powered circuits

Integrated Circuit IF System for FM Receiver

Description: The NTE788 is a monolithic integrated circuit in a 16–Lead DIP type package that provides all the functions of a comprehensive FM–IF system. This device features a three–stage FM–IF amplifier/limiter configuration with level detectors for each stage, a doubly–balanced quadrature FM