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AC857BQ

45V PNP TRANSISTOR SMALL SIGNAL TRANSISTOR IN SOT23

BVCEO > -45V\nIC = -100mA Continuous Collector Current\nICM = -200mA Peak Pulse Current;

DIODES

美台半导体

AC857BQ

PNP SMALL SIGNAL TRANSISTOR IN SOT23

文件:433.82 Kbytes Page:7 Pages

DIODES

美台半导体

PNP SMALL SIGNAL TRANSISTOR IN SOT23

文件:433.82 Kbytes Page:7 Pages

DIODES

美台半导体

封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 45V 0.1A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

DIODES

美台半导体

PNP general purpose transistors

DESCRIPTION PNP transistor encapsulated in an ultra small SC-89 (SOT490) plastic SMD package. NPN complements: BC846F, BC847F and BC848F series. FEATURES • Power dissipation comparable to SOT23 • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching

PHILIPS

飞利浦

NPN SILICON RF POWER TRANSISTOR

The RF Line NPN Silicon RF Power Transistor Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800–960 MHz. • Specified for VCE = 24 Vdc, IC = 0.3 Adc Characteristics Output Power = 2.

MOTOROLA

摩托罗拉

Integrated Circuit Low-Noise JFET-Input Operational Amplifier

Description: The NTE857M and NTE857SM are low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input of

NTE

Integrated Circuit Low-Noise JFET-Input Operational Amplifier

Description: The NTE857M and NTE857SM are low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input of

NTE

Integrated Circuit Low-Noise JFET-Input Operational Amplifier

Description: The NTE857M and NTE857SM are low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input of

NTE

AC857BQ产品属性

  • 类型

    描述

  • Automotive Compliant PPAP:

    Yes

  • Product Type:

    PNP

  • IC:

    0.1 A

  • ICM:

    0.2 A

  • PD:

    0.3 W

  • hFE:

    220 Min

  • hFE (@ IC):

    0.002 A

  • hFE (@ IC2):

    N/A A

  • VCE (SAT) Max:

    300 mV

  • VCE (SAT) (@ IC/IB2) (A/m A) (A/m A):

    0.1/5

  • VCE (SAT) (Max.2):

    650 mV

  • VCE (SAT) (@ IC/IB) (A/m A):

    N/A

  • fT:

    200 MHz

  • RCE(SAT):

    N/A mΩ

  • Packages:

    SOT23

更新时间:2026-5-23 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
DIODES INCORPORATED
25+
N/A
6843
样件支持,可原厂排单订货!
DIODES INCORPORATED
25+
N/A
6895
正规渠道,免费送样。支持账期,BOM一站式配齐
DIODES
18+
SOT-23
90000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
DIODES/美台
25+
SOT-23
20300
DIODES/美台原装特价AC857BQ即刻询购立享优惠#长期有货
DIODES/美台
25+
NA
30000
房间原装现货特价热卖,有单详谈
DIODES(美台)
25+
SOT-23
18000
原装正品 有挂有货 假一赔十
DIODES/美台
22+
SOT-23
20000
只做原装
DIODES(美台)
24+
SOT-23
4163
全新原装正品现货可开票
DIODES/美台
2447
SOT23
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
DIODES/美台
25+
NA
90000
全新原装现货

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