丝印代码：AC253M；Dual 4-Input Multiplexer, Three-State

Features • Buffered Inputs • Typical Propagation Delay - 6.3ns at VCC = 5V, TA = 25oC, CL = 50pF • Exceeds 2kV ESD Protection MIL-STD-883, Method 3015 • SCR-Latchup-Resistant CMOS Process and Circuit Design • Speed of Bipolar FAST™/AS/S with Significantly Reduced Power Consumption • Bala

丝印代码：AC253M；Dual 4-Input Multiplexer, Three-State

Features • Buffered Inputs • Typical Propagation Delay - 6.3ns at VCC = 5V, TA = 25oC, CL = 50pF • Exceeds 2kV ESD Protection MIL-STD-883, Method 3015 • SCR-Latchup-Resistant CMOS Process and Circuit Design • Speed of Bipolar FAST™/AS/S with Significantly Reduced Power Consumption • Bala

丝印代码：AC253M；Dual 4-Input Multiplexer, Three-State

Features • Buffered Inputs • Typical Propagation Delay - 6.3ns at VCC = 5V, TA = 25oC, CL = 50pF • Exceeds 2kV ESD Protection MIL-STD-883, Method 3015 • SCR-Latchup-Resistant CMOS Process and Circuit Design • Speed of Bipolar FAST™/AS/S with Significantly Reduced Power Consumption • Bala

4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 15 WATTS

Complementary Silicon Power Plastic Transistors . . . designed for low power audio amplifier and low–current, high–speed switching applications. • High Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (Min) — MJE243, MJE253 • High DC Current Gain @ IC = 200 mAdc

POWER TRANSISTORS COMPLEMENTARY SILICON

These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features • High Collector−Emitter Sustaining Voltage − VCEO(sus) = 100 Vdc (Min) • High DC Current Gain @ IC = 200 mAdc hFE = 40−200

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE253 (NPN) and NTE254 (PNP) are silicon complementary Darlington transistors in a TO126 type case designed for general–purpose amplifier and low–speed switching applications. Features: • High DC Current Gain: hFE = 2000 (Typ) @ IC = 2A • Monolithic Construction wit

SILICON TRIACS

● High Current Triacs ● 20 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● 150 A Peak Current ● Max IGTof 50 mA (Quadrants 1 - 3)

SILICON TRIACS

● High Current Triacs ● 20 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● 150 A Peak Current ● Max IGTof 50 mA (Quadrants 1 - 3)