封装/外壳：4-DIP（0.300"，7.62mm） 包装：管件 描述：DIP-4 60V/550MA SSR RELAY SPST-N 继电器 固态继电器

封装/外壳：4-DIP（0.300"，7.62mm） 包装：管件 描述：DIP-4 60V/550MA SSR RELAY SPST-N 继电器 固态继电器

光电可控硅(固态继电器)

丝印代码：AB374A；OCTAL EDGE-TRIGGERED D-TYPE FLIP-FLOPS WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounce)

丝印代码：AB374A；OCTAL EDGE-TRIGGERED D-TYPE FLIP-FLOPS WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounce)

丝印代码：AB374A；OCTAL EDGE-TRIGGERED D-TYPE FLIP-FLOPS WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounce)

丝印代码：AB374A；OCTAL EDGE-TRIGGERED D-TYPE FLIP-FLOPS WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounce)

丝印代码：AB374A；OCTAL EDGE-TRIGGERED D-TYPE FLIP-FLOPS WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounce)

丝印代码：AB374A；OCTAL EDGE-TRIGGERED D-TYPE FLIP-FLOPS WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounce)

丝印代码：AB374A；OCTAL EDGE-TRIGGERED D-TYPE FLIP-FLOPS WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounce)

丝印代码：AB374A；OCTAL EDGE-TRIGGERED D-TYPE FLIP-FLOPS WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounce)

3730-3770 MHz Cavity Band Pass Filter

固态继电器(MOS输出)