Bluetooth

AB1520 is an advanced single-chip solution which integrates baseband and radio for intensive audio applications. It is Bluetooth 4.2 dual mode certified and supports wide band speech which is defined at HFP1.6, AAC decoder, and 1-Mic for standard noise reduction and echo cancellation performance. AB • BT 4.2 dual mode including low energy profiles\n• Support EDR function\n• A2DP profile version 1.3 compliant\n• HFP profile version 1.6 compliant\n• HSP profile version 1.2 compliant\n• AVRCP profile version 1.5 compliant\n• SPP profile version 1.2 compliant\n• Multipoint for HFP and A2DP\n• Embed;

to 20GHz Broadband MMIC Amplifier

The AB1520AD is a high performance 2GHz to 20GHz Gallium Arsenide monolithic travelling wave amplifier. It is suitable for use in broadband communication, instrumentation, and electronic warfare applications. The die is fabricated using our 0.25μm process. The circuit is DC-blocked at both the RF in • 15dB Gain\n• Low Noise Amplifier\n• Single Supply +5V @ 90mA\n• 15dBm P1dB Output Power at 20GHz\n• pHEMT Technology\n• Input Return Loss better than 12dB\n• Output Return Loss better than 12dB;

Bluetooth

AB1520H is an advanced single-chip solution which integrates baseband and radio for intensive audio applications. It is Bluetooth 4.2 certified and supports wide band speech which is defined at HFP1.6, AAC decoder, and 2-Mic for better noise reduction and echo cancellation performance. AB1520H embed • BT 4.2 including low energy profiles\n• Support EDR function\n• A2DP profile version 1.3 compliant\n• HFP profile version 1.6 compliant\n• HSP profile version 1.2 compliant\n• AVRCP profile version 1.5 compliant\n• SPP profile version 1.2 compliant\n• Multipoint for HFP and A2DP\n• Embedded 96MIPS;

Enclosure, ABS

文件：451.57 Kbytes Page：2 Pages

NPN SILICON TRANSISTOR WITH INTEGRATED DIODE

NPN SILICON TRANSISTOR WITH INTEGRATED DIODE ● Designed for Self Oscillating Inverter Applications ● Rugged 1500 V Planar Construction ● Integral Free-Wheeling Anti-Parallel Diode

ULTRAFAST RECTIFIERS 15 AMPERES 200-400-600 VOLTS

SWITCHMODE Power Rectifiers . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 35 and 60 Nanosecond Recovery Time • 175°C Operating Junction Temperature • Popular TO–220 Package • H

Rectifier diodes Schottky barrier

GENERAL DESCRIPTION Dual schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYL1525CT series is supplied in the SOT78 (TO220AB) conventional leaded package. The PBYL1525CTB series is supplied in the SOT404 surface mo

N-CHANNEL POWER MOS FET ARRAY SWITCHING USE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

SWITCHMODE Power Rectifiers

文件：98.72 Kbytes Page：8 Pages