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AA02价格
参考价格：￥38.3636
型号：AA020A 品牌：COOPER 备注：这里有AA02多少钱，2025年最近7天走势，今日出价，今日竞价，AA02批发/采购报价，AA02行情走势销售排行榜，AA02报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Aluminum Nitride 2 dB FLANGED ATTENUATOR Features: ♦ Aluminum Nitride Material ♦ DC - 2 GHz Performance ♦ 100 Watt Input Power ♦ Flange Mount | BARRY Vishay Barry |   | ||
Aluminum Nitride Features: ♦ Aluminum Nitride Material ♦ DC - 4 GHz Performance ♦ 10 Watt Input Power ♦ Flange Mount General Description: The AA0200-10-3X is a 2 dB, Aluminum Nitride flanged attenuator. It has an input power rating of 10 watts, while maintaining a constant flange temperature of 100°C. I | BARRY Vishay Barry | | ||
Aluminum Nitride 2 dB FLANGED ATTENUATOR Features: ♦ Aluminum Nitride Material ♦ DC - 4 GHz Performance ♦ 40 Watt Input Power ♦ Flange Mount | BARRY Vishay Barry | | ||
Aluminum Nitride FLANGED ATTENUATOR Features: ♦ AlN Material ♦ DC - 4 GHz Performance ♦ 50 Watt Input Power ♦ Flange Mount | BARRY Vishay Barry | | ||
21-24 GHz GaAs MMIC Low Noise Amplifier Description Alpha’s three-stage reactively-matched 21–24 GHz MMIC low noise amplifier has typical small signal gain of 19 dB with a typical noise figure of 2.6 dB at 23 GHz. The chip uses Alpha’s proven 0.25 µm low noise PHEMT technology, and is based upon MBE layers and electron beam lithography | ALPHA | | ||
20-24 GHz Low Noise Amplifier Description The AA022N1-65 is a broadband millimeterwave amplifier in a hermetic package. The amplifier is designed for use in millimeterwave communication and sensor systems as the receiver front-end, transmitter gain stage, or local oscillator gain stage when high gain, wide dynamic range, and | ALPHA | | ||
20-24 GHz Surface Mount Low Noise Amplifier Description The AA022N1-A2 is a broadband millimeterwave low noise amplifier in a rugged surface mount package which is compatible with high-volume solder installation. The amplifier is designed for use in millimeterwave communication and sensor systems as the receiver frontend or as a gain stage | ALPHA | | ||
18-23 GHz GaAs MMIC Power Amplifier Description Alpha’s two-stage balanced K band GaAs MMIC power amplifier has a typical P1 dB of 24.5 dBm with 13 dB associated gain and 11 power added efficiency at 23 GHz.The chip uses Alpha’s proven 0.25 µm MESFET technology, and is based upon MBE layers and electron beam lithography for the hig | ALPHA | | ||
25-29 GHz GaAs MMIC Driver Amplifier Description Alpha’s three-stage reactively-matched 25–29 GHz GaAs MMIC driver amplifier has typical small signal gain of 17 dB with a typical P1 dB of 16 dBm at 26.5 GHz. The chip uses Alpha’s proven 0.25 µm MESFET technology, and is based upon MBE layers and electron beam lithography for the hig | ALPHA | | ||
23.5-26.5 GHz GaAs MMIC Power Amplifier Description Alpha’s three-stage balanced K band GaAs MMIC power amplifier has a typical P1 dB of 24 dBm and a typical PSAT of 26 dBm at 26.5 GHz. The chip uses Alpha’s proven 0.25 µm MESFET technology, and is based upon MBE layers and electron beam lithography for the highest uniformity and repea | ALPHA | | ||
23.5-26.5 GHz Surface Mount Medium Power Amplifier Description The AA026P2-A4 is a broadband millimeterwave medium power amplifier in a rugged surface mount package that is compatible with high-volume solder installation. The amplifier is designed for use in millimeterwave communication and sensor systems as an output stage or driver in the trans | ALPHA | | ||
24-30 GHz GaAs MMIC Low Noise Amplifier Description Alpha’s three-stage reactively-matched 24–30 GHz MMIC low noise amplifier has typical small signal gain of 17 dB with a typical noise figure of 3.0 dB at 28 GHz. The chip uses Alpha’s proven 0.25 µm low noise PHEMT technology, and is based upon MBE layers and electron beam lithography | ALPHA | | ||
23-30 GHz Low Noise Amplifier Description The AA028N1-99 is a broadband millimeterwave amplifier in a rugged package.The amplifier is designed for use in millimeterwave communication and sensor systems as the receiver front-end or transmitter gain stage when high gain, wide dynamic range, and low noise figure are required.The | ALPHA | | ||
24-30 GHz Surface Mount Low Noise Amplifier Description The AA028N1-A2 is a broadband millimeterwave low noise amplifier in a rugged surface mount package which is compatible with high-volume solder installation. The amplifier is designed for use in millimeterwave communication and sensor systems as the receiver frontend or as a gain stage | ALPHA | | ||
27-29 GHz GaAs MMIC Power Amplifier Description Alpha’s two-stage balanced Ka band GaAs MMIC power amplifier has a typical P1 dB of 22 dBm with 12.5 dB associated gain and 10 power added efficiency at 28 GHz. The chip uses Alpha’s proven 0.25 µm MESFET technology, and is based upon MBE layers and electron beam lithography for the h | ALPHA | | ||
27-31 GHz GaAs MMIC Driver Amplifier Description Alpha’s two-stage reactively-matched 27–31 GHz GaAs MMIC driver amplifier has typical small signal gain of 14 dB with a typical P1 dB of 16 dBm at 28 GHz.The chip uses Alpha’s proven 0.25 µm MESFET technology, and is based upon MBE layers and electron beam lithography for the highest | ALPHA | | ||
25-31 GHz Amplifier Description The AA028P2-99 is a broadband millimeterwave amplifier in a rugged package.The amplifier is designed for use in millimeterwave communication and sensor systems as a gain stage in the receiver, transmitter, or local oscillator chain. The robust ceramic and metal package provides excell | ALPHA | | ||
25-31 GHz Surface Mount Amplifier Description The AA028P2-A2 is a broadband millimeterwave driver amplifier in a rugged surface mount package which is compatible with high volume solder installation. The amplifier is designed for use in millimeterwave communication and sensor systems as a gain stage in the receiver, transmitter, | ALPHA | | ||
27-31 GHz GaAs MMIC Driver Amplifier Description Alpha’s three-stage reactively-matched 27–31 GHz GaAs MMIC driver amplifier has typical small signal gain of 19 dB with a typical P1 dB of 16 dBm at 28 GHz. The chip uses Alpha’s proven 0.25 µm MESFET technology, and is based upon MBE layers and electron beam lithography for the highe | ALPHA | | ||
COLOUR TELEVISION 文件：6.0518 Mbytes Page：70 Pages | TOSHIBA 东芝 | | ||
ANTI-SULFURATED CHIP RESISTORS AUTOMOTIVE GRADE 文件：666.72 Kbytes Page：10 Pages | YAGEO 国巨 | | ||
ANTI-SULFURATED CHIP RESISTORS AUTOMOTIVE GRADE 文件：522.289 Kbytes Page：10 Pages | YAGEO 国巨 | | ||
ANTI-SULFURATED CHIP RESISTORS AUTOMOTIVE GRADE 文件：666.72 Kbytes Page：10 Pages | YAGEO 国巨 | | ||
ANTI-SULFURATED CHIP RESISTORS AUTOMOTIVE GRADE 文件：522.289 Kbytes Page：10 Pages | YAGEO 国巨 | | ||
ANTI-SULFURATED CHIP RESISTORS AUTOMOTIVE GRADE 文件：666.72 Kbytes Page：10 Pages | YAGEO 国巨 | | ||
ANTI-SULFURATED CHIP RESISTORS AUTOMOTIVE GRADE 文件：666.72 Kbytes Page：10 Pages | YAGEO 国巨 | | ||
ANTI-SULFURATED CHIP RESISTORS AUTOMOTIVE GRADE 文件：522.289 Kbytes Page：10 Pages | YAGEO 国巨 | | ||
ANTI-SULFURATED CHIP RESISTORS AUTOMOTIVE GRADE 文件：666.72 Kbytes Page：10 Pages | YAGEO 国巨 | | ||
ANTI-SULFURATED CHIP RESISTORS AUTOMOTIVE GRADE 文件：522.289 Kbytes Page：10 Pages | YAGEO 国巨 | | ||
ANTI-SULFURATED CHIP RESISTORS AUTOMOTIVE GRADE 文件：666.72 Kbytes Page：10 Pages | YAGEO 国巨 | | ||
ANTI-SULFURATED CHIP RESISTORS AUTOMOTIVE GRADE 文件：666.72 Kbytes Page：10 Pages | YAGEO 国巨 | | ||
ANTI-SULFURATED CHIP RESISTORS AUTOMOTIVE GRADE 文件：522.289 Kbytes Page：10 Pages | YAGEO 国巨 | | ||
ANTI-SULFURATED CHIP RESISTORS AUTOMOTIVE GRADE 文件：522.289 Kbytes Page：10 Pages | YAGEO 国巨 | | ||
ANTI-SULFURATED CHIP RESISTORS AUTOMOTIVE GRADE 文件：666.72 Kbytes Page：10 Pages | YAGEO 国巨 | | ||
ANTI-SULFURATED CHIP RESISTORS AUTOMOTIVE GRADE 文件：522.289 Kbytes Page：10 Pages | YAGEO 国巨 | | ||
ANTI-SULFURATED CHIP RESISTORS AUTOMOTIVE GRADE 文件：666.72 Kbytes Page：10 Pages | YAGEO 国巨 | | ||
ANTI-SULFURATED CHIP RESISTORS AUTOMOTIVE GRADE 文件：522.289 Kbytes Page：10 Pages | YAGEO 国巨 | | ||
ANTI-SULFURATED CHIP RESISTORS AUTOMOTIVE GRADE 文件：666.72 Kbytes Page：10 Pages | YAGEO 国巨 | | ||
ANTI-SULFURATED CHIP RESISTORS AUTOMOTIVE GRADE 文件：522.289 Kbytes Page：10 Pages | YAGEO 国巨 | | ||
ANTI-SULFURATED CHIP RESISTORS AUTOMOTIVE GRADE 文件：666.72 Kbytes Page：10 Pages | YAGEO 国巨 | | ||
ANTI-SULFURATED CHIP RESISTORS AUTOMOTIVE GRADE 文件：522.289 Kbytes Page：10 Pages | YAGEO 国巨 | | ||
ANTI-SULFURATED CHIP RESISTORS AUTOMOTIVE GRADE 文件：666.72 Kbytes Page：10 Pages | YAGEO 国巨 | | ||
ANTI-SULFURATED CHIP RESISTORS AUTOMOTIVE GRADE 文件：522.289 Kbytes Page：10 Pages | YAGEO 国巨 | | ||
ANTI-SULFURATED CHIP RESISTORS AUTOMOTIVE GRADE 文件：666.72 Kbytes Page：10 Pages | YAGEO 国巨 | | ||
ANTI-SULFURATED CHIP RESISTORS AUTOMOTIVE GRADE 文件：522.289 Kbytes Page：10 Pages | YAGEO 国巨 | | ||
ANTI-SULFURATED CHIP RESISTORS AUTOMOTIVE GRADE 文件：666.72 Kbytes Page：10 Pages | YAGEO 国巨 | | ||
ANTI-SULFURATED CHIP RESISTORS AUTOMOTIVE GRADE 文件：666.72 Kbytes Page：10 Pages | YAGEO 国巨 | | ||
ANTI-SULFURATED CHIP RESISTORS AUTOMOTIVE GRADE 文件：522.289 Kbytes Page：10 Pages | YAGEO 国巨 | | ||
ANTI-SULFURATED CHIP RESISTORS AUTOMOTIVE GRADE 文件：666.72 Kbytes Page：10 Pages | YAGEO 国巨 | | ||
ANTI-SULFURATED CHIP RESISTORS AUTOMOTIVE GRADE 文件：522.289 Kbytes Page：10 Pages | YAGEO 国巨 | | ||
ANTI-SULFURATED CHIP RESISTORS AUTOMOTIVE GRADE 文件：666.72 Kbytes Page：10 Pages | YAGEO 国巨 | | ||
ANTI-SULFURATED CHIP RESISTORS AUTOMOTIVE GRADE 文件：666.72 Kbytes Page：10 Pages | YAGEO 国巨 | | ||
ANTI-SULFURATED CHIP RESISTORS AUTOMOTIVE GRADE 文件：522.289 Kbytes Page：10 Pages | YAGEO 国巨 | | ||
ANTI-SULFURATED CHIP RESISTORS AUTOMOTIVE GRADE 文件：522.289 Kbytes Page：10 Pages | YAGEO 国巨 | | ||
ANTI-SULFURATED CHIP RESISTORS AUTOMOTIVE GRADE 文件：666.72 Kbytes Page：10 Pages | YAGEO 国巨 | | ||
ANTI-SULFURATED CHIP RESISTORS AUTOMOTIVE GRADE 文件：522.289 Kbytes Page：10 Pages | YAGEO 国巨 | | ||
ANTI-SULFURATED CHIP RESISTORS AUTOMOTIVE GRADE 文件：666.72 Kbytes Page：10 Pages | YAGEO 国巨 | | ||
ANTI-SULFURATED CHIP RESISTORS AUTOMOTIVE GRADE 文件：522.289 Kbytes Page：10 Pages | YAGEO 国巨 | | ||
ANTI-SULFURATED CHIP RESISTORS AUTOMOTIVE GRADE 文件：666.72 Kbytes Page：10 Pages | YAGEO 国巨 | | ||
ANTI-SULFURATED CHIP RESISTORS AUTOMOTIVE GRADE 文件：522.289 Kbytes Page：10 Pages | YAGEO 国巨 | |
AA02产品属性
- 类型
描述
- 型号
AA02
- 制造商
KORJO PRODUCTS
- 功能描述
AUS TO WORLD ADAPTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
BARRY |
三年内 |
1983 |
只做原装正品 |
||||
BARRY |
10+ |
21 |
优势货源原装正品 |
||||
Yageo |
23+ |
SMD |
50000 |
全新原装正品现货,支持订货 |
|||
BARRY |
16+ |
NA |
8800 |
原装现货,货真价优 |
AA02规格书下载地址
AA02参数引脚图相关
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- AA10B
- AA109
- AA108
- AA107
- AA104
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- AA101
- AA1000
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- AA100
- AA09A
- AA08A
- AA07S
- AA07A
- AA05E-048L-050S
- AA05E
- AA05B
- AA057VG12
- AA057VF12
- AA050ME01--T1
- AA04S-D
- AA04S1200A
- AA04S0900A
- AA04S0300A
- AA04S
- AA0-4A
- AA-040-24-22-00-00
- AA03A-005L-050S
- AA-035-24-22-00-00
- AA-033-24-22-00-00
- AA0-32M50A
- AA0-32M40A
- AA032A
- AA0-2A
- AA02A
- AA-026-12-22-00-00
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- AA01D-012L-090S
- AA01D
- AA01A-P010VA1
- AA01A
- AA-019-12-22-00-00
- AA016A
- AA006-02E
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- AA.107.301111
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- AA.105.301111
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- A9807-A
- A9806-A
- A96020
- A94-C
AA02数据表相关新闻
AA8MR00 FUJI Dia.1.8 Melf ESD Nozzle 吸嘴 富士 贴片机
出售以下各种富士，飞达和配件： UF104** W16c feeder, BUCKET TYPE AA85116 W16c feeder 15inch REEL HOLDER 2UDLFB0007** W16f feeder with 15inch reel holder 2ADLFB005904** W16c Feeder Body 2UDLFB0013** W16f feeder, BUCKET TYPE
2023-12-25AA3MB00 Fuji dispense Dia. 0,5mm 点胶头单针 富士
出售以下各种富士，飞达和配件： UF098** W08c NXT feeder with 13inch reel holder UF099** W08c NXT feeder, BUCKET TYPE 2UDLFA0010** W08f NXT feeder with 7inch reel holder 2UDLFA0011** W08f NXT feeder with 13inch reel holder
2023-11-27AA35N00 Fuji dispense Dia. 0,6mm 点胶嘴 点胶头单针 富士
出售以下各种富士，飞达和配件; UF111** W56c feeder with 15inch reel holder UF112** W56c feeder, BUCKET TYPE AB10512** W56c Feeder Body UF025** W72 feeder with 15inch reel holder UF052** W72 feeder, BUCKET TYPE
2023-11-27AA005-02E
AA005-02E
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A9SE76，当天发货0755-82732291全新原装现货或门市自取.
2020-10-8A9SE30-A1-RH
A9SE30-A1-RH，当天发货0755-82732291全新原装现货或门市自取.
2020-10-8
DdatasheetPDF页码索引
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