16M(1M x 16bit) Normal mode & Page mode with Deep Power Down Static Random Access Memory

DESCRIPTION The A64S06162A is a 16Mb high speed, low power Static Random Access Memory(SRAM) organized as 1,048,576 words by 16 bits and supports Deep Power Down and Page Mode. The A64S06162A is a Pseudo SRAM based on successfully proven DRAM CELL SRAM which was specifically developed for cost se

16M(1M x 16bit) Normal mode & Page mode with Deep Power Down Static Random Access Memory

DESCRIPTION\nThe A64S06162A is a 16Mb high speed, low power Static Random Access Memory(SRAM) organized as 1,048,576 words by 16 bits and supports Deep Power Down and Page Mode. The A64S06162A is a Pseudo SRAM based on successfully proven DRAM CELL SRAM which was specifically developed for cost sens • Standard Asynchronous SRAM Interface with Deep Power Down and Page Mode\n• Organization : 1M x 16Bit\n• Power Supply Voltage : 2.7 ~ 3.3 V\n• Page Size : 4 words\n• Page Mode Access (tPAA) : 35ns\n• Data Retention Voltage : 2.4V\n• Deep Power Down : 5uA\n• Tri-state Output and TTL Compatible;

16M(1M x 16bit) Normal mode & Page mode with Deep Power Down Static Random Access Memory

DESCRIPTION The A64S06162A is a 16Mb high speed, low power Static Random Access Memory(SRAM) organized as 1,048,576 words by 16 bits and supports Deep Power Down and Page Mode. The A64S06162A is a Pseudo SRAM based on successfully proven DRAM CELL SRAM which was specifically developed for cost se

16M(1M x 16bit) Normal mode & Page mode with Deep Power Down Static Random Access Memory

DESCRIPTION The A64S06162A is a 16Mb high speed, low power Static Random Access Memory(SRAM) organized as 1,048,576 words by 16 bits and supports Deep Power Down and Page Mode. The A64S06162A is a Pseudo SRAM based on successfully proven DRAM CELL SRAM which was specifically developed for cost se

16M(1M x 16bit) Normal mode & Page mode with Deep Power Down Static Random Access Memory

DESCRIPTION The A64S06162A is a 16Mb high speed, low power Static Random Access Memory(SRAM) organized as 1,048,576 words by 16 bits and supports Deep Power Down and Page Mode. The A64S06162A is a Pseudo SRAM based on successfully proven DRAM CELL SRAM which was specifically developed for cost se

16M(1M x 16bit) Normal mode & Page mode with Deep Power Down Static Random Access Memory

DESCRIPTION The A64S06162A is a 16Mb high speed, low power Static Random Access Memory(SRAM) organized as 1,048,576 words by 16 bits and supports Deep Power Down and Page Mode. The A64S06162A is a Pseudo SRAM based on successfully proven DRAM CELL SRAM which was specifically developed for cost se

16M(1M x 16bit) Normal mode & Page mode with Deep Power Down Static Random Access Memory

DESCRIPTION The A64S06162A is a 16Mb high speed, low power Static Random Access Memory(SRAM) organized as 1,048,576 words by 16 bits and supports Deep Power Down and Page Mode. The A64S06162A is a Pseudo SRAM based on successfully proven DRAM CELL SRAM which was specifically developed for cost se