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A64S06161A

16M(1M x 16bit) Normal mode & Page mode Static Random Access Memory

DESCRIPTION The A64S06161A is a 16Mb high speed, low power Static Random Access Memory(SRAM) organized as 1,048,576 words by 16 bits and supports Page Mode. The A64S06161A is a Pseudo SRAM based on successfully proven DRAM CELL SRAM which was specifically developed for cost sensitive, low power

AMICC

联笙电子

A64S06161A

16M(1M x 16bit) Normal mode & Page mode Static Random Access Memory

DESCRIPTION\nThe A64S06161A is a 16Mb high speed, low power Static Random Access Memory(SRAM) organized as 1,048,576 words by 16 bits and supports Page Mode.\nThe A64S06161A is a Pseudo SRAM based on successfully proven DRAM CELL SRAM which was specifically developed for cost sensitive, low power co • Standard Asynchronous SRAM Interface and Page Mode\n• Organization : 1M x 16Bit\n• Power Supply Voltage : 2.7 ~ 3.3 V\n• Page Size : 4 words\n• Page Mode Access (tPAA) : 35ns\n• Data Retention Voltage : 2.4V\n• Tri-state Output and TTL Compatible;

AMIC

联笙电子

16M(1M x 16bit) Normal mode & Page mode Static Random Access Memory

DESCRIPTION The A64S06161A is a 16Mb high speed, low power Static Random Access Memory(SRAM) organized as 1,048,576 words by 16 bits and supports Page Mode. The A64S06161A is a Pseudo SRAM based on successfully proven DRAM CELL SRAM which was specifically developed for cost sensitive, low power

AMICC

联笙电子

16M(1M x 16bit) Normal mode & Page mode Static Random Access Memory

DESCRIPTION The A64S06161A is a 16Mb high speed, low power Static Random Access Memory(SRAM) organized as 1,048,576 words by 16 bits and supports Page Mode. The A64S06161A is a Pseudo SRAM based on successfully proven DRAM CELL SRAM which was specifically developed for cost sensitive, low power

AMICC

联笙电子

16M(1M x 16bit) Normal mode & Page mode Static Random Access Memory

DESCRIPTION The A64S06161A is a 16Mb high speed, low power Static Random Access Memory(SRAM) organized as 1,048,576 words by 16 bits and supports Page Mode. The A64S06161A is a Pseudo SRAM based on successfully proven DRAM CELL SRAM which was specifically developed for cost sensitive, low power

AMICC

联笙电子

16M(1M x 16bit) Normal mode & Page mode Static Random Access Memory

DESCRIPTION The A64S06161A is a 16Mb high speed, low power Static Random Access Memory(SRAM) organized as 1,048,576 words by 16 bits and supports Page Mode. The A64S06161A is a Pseudo SRAM based on successfully proven DRAM CELL SRAM which was specifically developed for cost sensitive, low power

AMICC

联笙电子

16M(1M x 16bit) Normal mode & Page mode Static Random Access Memory

DESCRIPTION The A64S06161A is a 16Mb high speed, low power Static Random Access Memory(SRAM) organized as 1,048,576 words by 16 bits and supports Page Mode. The A64S06161A is a Pseudo SRAM based on successfully proven DRAM CELL SRAM which was specifically developed for cost sensitive, low power

AMICC

联笙电子

A64S06161A产品属性

  • 类型

    描述

  • 型号

    A64S06161A

  • 制造商

    AMICC

  • 制造商全称

    AMIC Technology

  • 功能描述

    16M(1M x 16bit) Normal mode & Page mode Static Random Access Memory

更新时间:2026-5-18 17:23:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TFBGA396
25+
TFBGA396
20000
原装
AVAGO
25+23+
SOP
54750
绝对原装正品现货,全新深圳原装进口现货
NA
23+
NA
26094
10年以上分销经验原装进口正品,做服务型企业
AVAGO
25+
SOP16
30000
代理全新原装现货,价格优势
M/A-COM
24+
SMD
5500
M/A-COM专营品牌绝对进口原装假一赔十
FAIRCHILD
24+
TO-92
9750
ALLWINNER/全志
24+
TFBGA-396
5000
ALLWINNE原厂支持只做自己现货
N/A
2450+
SMT36
6540
只做原装正品现货或订货!终端客户免费申请样品!
ALLWINNER/全志
25+
BGA
1000
全新原装正品支持含税
ALLWINNE
25+
BGA
2380
市场最低 原装现货 假一罚百 可开原型号

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