包装：袋 描述：100' SILICONE TUBING 测试与计量 配件

包装：散装 描述：100' SILICONE TUBING 测试与计量 配件

128K X 8 BIT HIGH SPEED CMOS SRAM

General Description The A617308 is a high-speed, low-power 1,048,576-bit static random access memory organized as 131,072 words by 8 bits and operates on a single 5V power supply. It is built using high performance CMOS process. Inputs and three-state outputs are TTL compatible and allow for dire

128K X 8 BIT HIGH SPEED CMOS SRAM

General Description The A6173081 is a high-speed 1,048,576-bit static random access memory organized as 131,072 words by 8 bits and operates on a 5V power supply. It is built using high performance CMOS process. Inputs and three-state outputs are TTL compatible and allow for direct interfacing w

128K X 8 BIT HIGH SPEED CMOS SRAM

General Description The A6173081 is a high-speed 1,048,576-bit static random access memory organized as 131,072 words by 8 bits and operates on a 5V power supply. It is built using high performance CMOS process. Inputs and three-state outputs are TTL compatible and allow for direct interfacing w

128K X 8 BIT HIGH SPEED CMOS SRAM

General Description The A6173081 is a high-speed 1,048,576-bit static random access memory organized as 131,072 words by 8 bits and operates on a 5V power supply. It is built using high performance CMOS process. Inputs and three-state outputs are TTL compatible and allow for direct interfacing w

128K X 8 BIT HIGH SPEED CMOS SRAM

General Description The A6173081 is a high-speed 1,048,576-bit static random access memory organized as 131,072 words by 8 bits and operates on a 5V power supply. It is built using high performance CMOS process. Inputs and three-state outputs are TTL compatible and allow for direct interfacing w

128K X 8 BIT HIGH SPEED CMOS SRAM

General Description The A6173081 is a high-speed 1,048,576-bit static random access memory organized as 131,072 words by 8 bits and operates on a 5V power supply. It is built using high performance CMOS process. Inputs and three-state outputs are TTL compatible and allow for direct interfacing w

128K X 8 BIT HIGH SPEED CMOS SRAM

General Description The A617308 is a high-speed, low-power 1,048,576-bit static random access memory organized as 131,072 words by 8 bits and operates on a single 5V power supply. It is built using high performance CMOS process. Inputs and three-state outputs are TTL compatible and allow for dire

128K X 8 BIT HIGH SPEED CMOS SRAM

General Description The A617308 is a high-speed, low-power 1,048,576-bit static random access memory organized as 131,072 words by 8 bits and operates on a single 5V power supply. It is built using high performance CMOS process. Inputs and three-state outputs are TTL compatible and allow for dire

128K X 8 BIT HIGH SPEED CMOS SRAM

General Description The A617308 is a high-speed, low-power 1,048,576-bit static random access memory organized as 131,072 words by 8 bits and operates on a single 5V power supply. It is built using high performance CMOS process. Inputs and three-state outputs are TTL compatible and allow for dire

128K X 8 BIT HIGH SPEED CMOS SRAM

General Description The A617308 is a high-speed, low-power 1,048,576-bit static random access memory organized as 131,072 words by 8 bits and operates on a single 5V power supply. It is built using high performance CMOS process. Inputs and three-state outputs are TTL compatible and allow for dire

128K X 8 BIT HIGH SPEED CMOS SRAM

General Description The A617308 is a high-speed, low-power 1,048,576-bit static random access memory organized as 131,072 words by 8 bits and operates on a single 5V power supply. It is built using high performance CMOS process. Inputs and three-state outputs are TTL compatible and allow for dire

128K X 8 BIT HIGH SPEED CMOS SRAM

General Description The A617308 is a high-speed, low-power 1,048,576-bit static random access memory organized as 131,072 words by 8 bits and operates on a single 5V power supply. It is built using high performance CMOS process. Inputs and three-state outputs are TTL compatible and allow for dire

128K X 8 BIT HIGH SPEED CMOS SRAM

General Description The A617308 is a high-speed, low-power 1,048,576-bit static random access memory organized as 131,072 words by 8 bits and operates on a single 5V power supply. It is built using high performance CMOS process. Inputs and three-state outputs are TTL compatible and allow for dire

128K X 8 BIT HIGH SPEED CMOS SRAM

General Description The A617308 is a high-speed, low-power 1,048,576-bit static random access memory organized as 131,072 words by 8 bits and operates on a single 5V power supply. It is built using high performance CMOS process. Inputs and three-state outputs are TTL compatible and allow for dire

128K X 8 BIT HIGH SPEED CMOS SRAM

128K X 8 BIT HIGH SPEED CMOS SRAM

Single & Dual Output, 6W Ultra-Wide Input Range DC/DC Converters

文件：193.6 Kbytes Page：2 Pages

Accessories Hardware

[NKK Switches] Hardware Threading Many hardware pieces are available in both metric and inch threading, and in such cases M (metric) and H (inch) are noted in the descriptions. The customer must select threading by placing an M or H after the basic AT part number. If the hardware is available

Dynamic, Self-Calibrating, Peak-Detecting, Differential Hall Effect Gear Tooth Sensor IC

Features and Benefits ▪ Self-calibrating for tight timing accuracy ▪ First-tooth detection ▪ Immunity to air gap variation and system offsets ▪ Immunity to signature tooth offsets ▪ Integrated capacitor provides analog peak and valley information ▪ Low timing-accuracy drift with temperature

E-pHEMT MMIC

文件：209.32 Kbytes Page：3 Pages

Dynamic, Self-Calibrating, Peak-Detecting, Differential Hall Effect Gear Tooth Sensor IC

文件：494.81 Kbytes Page：16 Pages