包装：袋 描述：100' SILICONE TUBING 测试与计量 配件

包装：散装 描述：100' SILICONE TUBING 测试与计量 配件

128K X 8 BIT HIGH SPEED CMOS SRAM

General Description The A617308 is a high-speed, low-power 1,048,576-bit static random access memory organized as 131,072 words by 8 bits and operates on a single 5V power supply. It is built using high performance CMOS process. Inputs and three-state outputs are TTL compatible and allow for dire

128K X 8 BIT HIGH SPEED CMOS SRAM

General Description The A6173081 is a high-speed 1,048,576-bit static random access memory organized as 131,072 words by 8 bits and operates on a 5V power supply. It is built using high performance CMOS process. Inputs and three-state outputs are TTL compatible and allow for direct interfacing w

128K X 8 BIT HIGH SPEED CMOS SRAM

General Description The A6173081 is a high-speed 1,048,576-bit static random access memory organized as 131,072 words by 8 bits and operates on a 5V power supply. It is built using high performance CMOS process. Inputs and three-state outputs are TTL compatible and allow for direct interfacing w

128K X 8 BIT HIGH SPEED CMOS SRAM

General Description The A6173081 is a high-speed 1,048,576-bit static random access memory organized as 131,072 words by 8 bits and operates on a 5V power supply. It is built using high performance CMOS process. Inputs and three-state outputs are TTL compatible and allow for direct interfacing w

128K X 8 BIT HIGH SPEED CMOS SRAM

General Description The A6173081 is a high-speed 1,048,576-bit static random access memory organized as 131,072 words by 8 bits and operates on a 5V power supply. It is built using high performance CMOS process. Inputs and three-state outputs are TTL compatible and allow for direct interfacing w

128K X 8 BIT HIGH SPEED CMOS SRAM

General Description The A6173081 is a high-speed 1,048,576-bit static random access memory organized as 131,072 words by 8 bits and operates on a 5V power supply. It is built using high performance CMOS process. Inputs and three-state outputs are TTL compatible and allow for direct interfacing w

128K X 8 BIT HIGH SPEED CMOS SRAM

General Description The A617308 is a high-speed, low-power 1,048,576-bit static random access memory organized as 131,072 words by 8 bits and operates on a single 5V power supply. It is built using high performance CMOS process. Inputs and three-state outputs are TTL compatible and allow for dire

128K X 8 BIT HIGH SPEED CMOS SRAM

General Description The A617308 is a high-speed, low-power 1,048,576-bit static random access memory organized as 131,072 words by 8 bits and operates on a single 5V power supply. It is built using high performance CMOS process. Inputs and three-state outputs are TTL compatible and allow for dire

128K X 8 BIT HIGH SPEED CMOS SRAM

General Description The A617308 is a high-speed, low-power 1,048,576-bit static random access memory organized as 131,072 words by 8 bits and operates on a single 5V power supply. It is built using high performance CMOS process. Inputs and three-state outputs are TTL compatible and allow for dire

128K X 8 BIT HIGH SPEED CMOS SRAM

General Description The A617308 is a high-speed, low-power 1,048,576-bit static random access memory organized as 131,072 words by 8 bits and operates on a single 5V power supply. It is built using high performance CMOS process. Inputs and three-state outputs are TTL compatible and allow for dire

128K X 8 BIT HIGH SPEED CMOS SRAM

General Description The A617308 is a high-speed, low-power 1,048,576-bit static random access memory organized as 131,072 words by 8 bits and operates on a single 5V power supply. It is built using high performance CMOS process. Inputs and three-state outputs are TTL compatible and allow for dire

128K X 8 BIT HIGH SPEED CMOS SRAM

General Description The A617308 is a high-speed, low-power 1,048,576-bit static random access memory organized as 131,072 words by 8 bits and operates on a single 5V power supply. It is built using high performance CMOS process. Inputs and three-state outputs are TTL compatible and allow for dire

128K X 8 BIT HIGH SPEED CMOS SRAM

General Description The A617308 is a high-speed, low-power 1,048,576-bit static random access memory organized as 131,072 words by 8 bits and operates on a single 5V power supply. It is built using high performance CMOS process. Inputs and three-state outputs are TTL compatible and allow for dire

128K X 8 BIT HIGH SPEED CMOS SRAM

General Description The A617308 is a high-speed, low-power 1,048,576-bit static random access memory organized as 131,072 words by 8 bits and operates on a single 5V power supply. It is built using high performance CMOS process. Inputs and three-state outputs are TTL compatible and allow for dire

128K X 8 BIT HIGH SPEED CMOS SRAM

128K X 8 BIT HIGH SPEED CMOS SRAM

Single & Dual Output, 6W Ultra-Wide Input Range DC/DC Converters

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NPN SILICON POWER (SWITCHING) TRANSISTOR

FEATURES * 2W POWER DISSIPATION * 12A Peak Pulse Current * Excellent HFE Characteristics up to 12 Amps * Extremely Low Saturation Voltage E.g. 8mv Typ. * Extremely Low Equivalent On-resistance; RCE(sat) 50mΩ at 3A

Varactor Diode

Description: The NTE617 is a dual voltage–variable capacitance diode designed for FM tuning, general frequency control and tuning, or any top–of–the–line application requiring back–to–back diode configurations for minimum signal distortion and detuning. This device is supplied in the popular TO92

Low-voltage high performance mixer FM IF system

DESCRIPTION The SA617 is a low voltage high performance monolithic FM IF system incorporating a mixer/oscillator, two limiting intermediate frequency amplifiers, quadrature detector, logarithmic received signal strength indicator (RSSI), voltage regulator and audio and RSSI op amps. The SA617 i

Low-voltage high performance mixer FM IF system

DESCRIPTION The SA617 is a low voltage high performance monolithic FM IF system incorporating a mixer/oscillator, two limiting intermediate frequency amplifiers, quadrature detector, logarithmic received signal strength indicator (RSSI), voltage regulator and audio and RSSI op amps. The SA617 i

DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS

SM-8 DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS