汽车全桥式 MOSFET 驱动器

A5929 全桥式控制器能与 N 沟道外部电源 MOSFET 连用，它是专门为汽车应用而设计的。\n\n独特的电荷泵稳压器能在最低 7 V 的电池电压下提供全 (>10 V) 栅极驱动，这能确保在最低 5.5 V 的电池电压下，使 A5929 在栅极驱动减小时工作。它采用自举电容器提供 N 沟道 MOSFET 所需的高电池电压。\n\n为全桥中的四个电源 MOSFET 中的每一个提供一个逻辑电平输入，以利用外部控制器定义的 PWM 方案驱动电机。集成分频控制可防止电源 MOSFET 出现交叉传导。\n\n每个 MOSFET 上的独立漏源电压监测器可提供电机相位的对电源短路和对地短路检测。单独的 • 用于 N 沟道 MOSFET 的大电流全桥式栅极驱动\n• 5.5 V - 50 V 电源电压范围\n• 欠压、超温监测器\n• 弱电流休眠模式\n;

Automotive Full-Bridge MOSFET Driver

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封装/外壳：24-TSSOP（0.173"，4.40mm 宽）裸露焊盘 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC MOTOR DRIVER 集成电路（IC） 全半桥驱动器

SURFACE MOUNT SILICON ZENER DIODE 1.5 WATT, 6.8 THRU 200 VOLTS 짹 5 TOLERANCE

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Description and Features: The NTE5844, NTE5845, and NTE5912 through NTE5933 are low power general purpose rectifier diodes in a DO4 type package designed for battery chargers, converters, power supplies, and machine tool controls. Features: • High Surge Current Capability • High Volt

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DESCRIPTION DO-214AC surface mountable package with glass passivated chip. The well-defined void-free case is of a transfer-moulded thermo-setting plastic. FEATURES • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • UL 94V-O classified plas

PHOTOMULTlPLlER TUBE

PHOTOMULTlPLlER TUBE 28mm(1–1/8 Inch) diameter, Good near IR response with prismatic window, 11–stage, Head–on type

1.5W SILICON SURFACE MOUNT ZENER DIODES

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