MICROPOWER, ULTRA-SENSITIVE HALL-EF FECT SWITCH

Description The A 3211 and A3212 integrated circuits are ultra-sensitive, pole in de pen dent Hall-effect switches with latched digital output. These sensors are es pe cial ly suited for operation in battery-operated, hand-held equip ment such as cellular and cordless tele phones, pagers, and p

Micropower, Ultra-sensitive Hall-effect Switches

Description The A 3211 and A3212 integrated circuits are ultra-sensitive, pole in de pen dent Hall-effect switches with latched digital output. These sensors are es pe cial ly suited for operation in battery-operated, hand-held equip ment such as cellular and cordless tele phones, pagers, and p

微功率、超灵敏霍尔效应开关

A3211 和 A3212 集成电路是带有锁存数字输出的超灵敏、不受磁极约束的霍尔效应开关。这些器件尤其适用于电池供电、手持型设备的操作，例如移动和无绳电话、传呼机以及掌上型电脑。2.5 至 3.5 V工作电压范围和独特的时钟方法，能将平均操作功率要求降低到 15 µW 以下（2.75 V 电源电压时） 。\r\n\r\n与其他霍尔效应开关不同的是，只要北极或南极磁场强度足够大，就能打开 A3212 中的输出，没有磁场的时候，输出就会停止。A3211 提供反向输出。不受磁极影响和最低的功率要求，允许这些器件轻松取换簧片开关，具有更高的可靠性并便于制造，从而降低对信号条件的要求。\r\n\r\n • 符合 AEC-Q100 标准 \r\n• 微功率操作\r\n• 使用南极或北极操作\r\n• 在 2.5 至 3.5 V 电池电压工作\r\n• 稳定斩波\r\n• 超卓的温度稳定性\r\n• 极低的开关点漂移\r\n• 对物理应力不敏感\r\n• 固态可靠性\r\n• 小尺寸\r\n• 不受磁极影响，可轻松制造;

HALF PITCH IDC SOCKET

HALF PITCH IDC SOCKET (1.27mm*1.27mm)

HALF PITCH IDC SOCKET

HALF PITCH IDC SOCKET (1.27mm*1.27mm)

HALF PITCH IDC SOCKET

HALF PITCH IDC SOCKET (1.27mm*1.27mm)

HALF PITCH IDC SOCKET

HALF PITCH IDC SOCKET (1.27mm*1.27mm)

HALF PITCH IDC SOCKET

HALF PITCH IDC SOCKET (1.27mm*1.27mm)

HALF PITCH IDC SOCKET

HALF PITCH IDC SOCKET (1.27mm*1.27mm)

HALF PITCH IDC SOCKET

HALF PITCH IDC SOCKET (1.27mm*1.27mm)

HALF PITCH IDC SOCKET

HALF PITCH IDC SOCKET (1.27mm*1.27mm)

MICROPOWER, ULTRA-SENSITIVE HALL-EF FECT SWITCH

Description The A 3211 and A3212 integrated circuits are ultra-sensitive, pole in de pen dent Hall-effect switches with latched digital output. These sensors are es pe cial ly suited for operation in battery-operated, hand-held equip ment such as cellular and cordless tele phones, pagers, and p

MICROPOWER, ULTRA-SENSITIVE HALL-EF FECT SWITCH

Description The A 3211 and A3212 integrated circuits are ultra-sensitive, pole in de pen dent Hall-effect switches with latched digital output. These sensors are es pe cial ly suited for operation in battery-operated, hand-held equip ment such as cellular and cordless tele phones, pagers, and p

Micropower, Ultra-sensitive Hall-effect Switches

Description The A 3211 and A3212 integrated circuits are ultra-sensitive, pole in de pen dent Hall-effect switches with latched digital output. These sensors are es pe cial ly suited for operation in battery-operated, hand-held equip ment such as cellular and cordless tele phones, pagers, and p

MICROPOWER, ULTRA-SENSITIVE HALL-EF FECT SWITCH

Description The A 3211 and A3212 integrated circuits are ultra-sensitive, pole in de pen dent Hall-effect switches with latched digital output. These sensors are es pe cial ly suited for operation in battery-operated, hand-held equip ment such as cellular and cordless tele phones, pagers, and p

Micropower, Ultra-sensitive Hall-effect Switches

Description The A 3211 and A3212 integrated circuits are ultra-sensitive, pole in de pen dent Hall-effect switches with latched digital output. These sensors are es pe cial ly suited for operation in battery-operated, hand-held equip ment such as cellular and cordless tele phones, pagers, and p

MICROPOWER, ULTRA-SENSITIVE HALL-EF FECT SWITCH

Description The A 3211 and A3212 integrated circuits are ultra-sensitive, pole in de pen dent Hall-effect switches with latched digital output. These sensors are es pe cial ly suited for operation in battery-operated, hand-held equip ment such as cellular and cordless tele phones, pagers, and p

Micropower, Ultra-sensitive Hall-effect Switches

Description The A 3211 and A3212 integrated circuits are ultra-sensitive, pole in de pen dent Hall-effect switches with latched digital output. These sensors are es pe cial ly suited for operation in battery-operated, hand-held equip ment such as cellular and cordless tele phones, pagers, and p

MICROPOWER, ULTRA-SENSITIVE HALL-EF FECT SWITCH

Description The A 3211 and A3212 integrated circuits are ultra-sensitive, pole in de pen dent Hall-effect switches with latched digital output. These sensors are es pe cial ly suited for operation in battery-operated, hand-held equip ment such as cellular and cordless tele phones, pagers, and p

MICROPOWER, ULTRA-SENSITIVE HALL-EF FECT SWITCH

Description The A 3211 and A3212 integrated circuits are ultra-sensitive, pole in de pen dent Hall-effect switches with latched digital output. These sensors are es pe cial ly suited for operation in battery-operated, hand-held equip ment such as cellular and cordless tele phones, pagers, and p

MICROPOWER, ULTRA-SENSITIVE HALL-EF FECT SWITCH

Description The A 3211 and A3212 integrated circuits are ultra-sensitive, pole in de pen dent Hall-effect switches with latched digital output. These sensors are es pe cial ly suited for operation in battery-operated, hand-held equip ment such as cellular and cordless tele phones, pagers, and p

Micropower, Ultra-sensitive Hall-effect Switches

Description The A 3211 and A3212 integrated circuits are ultra-sensitive, pole in de pen dent Hall-effect switches with latched digital output. These sensors are es pe cial ly suited for operation in battery-operated, hand-held equip ment such as cellular and cordless tele phones, pagers, and p

MICROPOWER, ULTRA-SENSITIVE HALL-EF FECT SWITCH

Description The A 3211 and A3212 integrated circuits are ultra-sensitive, pole in de pen dent Hall-effect switches with latched digital output. These sensors are es pe cial ly suited for operation in battery-operated, hand-held equip ment such as cellular and cordless tele phones, pagers, and p

Micropower, Ultra-sensitive Hall-effect Switches

Description The A 3211 and A3212 integrated circuits are ultra-sensitive, pole in de pen dent Hall-effect switches with latched digital output. These sensors are es pe cial ly suited for operation in battery-operated, hand-held equip ment such as cellular and cordless tele phones, pagers, and p

MICROPOWER, ULTRA-SENSITIVE HALL-EF FECT SWITCH

Description The A 3211 and A3212 integrated circuits are ultra-sensitive, pole in de pen dent Hall-effect switches with latched digital output. These sensors are es pe cial ly suited for operation in battery-operated, hand-held equip ment such as cellular and cordless tele phones, pagers, and p

MICROPOWER, ULTRA-SENSITIVE HALL-EF FECT SWITCH

Description The A 3211 and A3212 integrated circuits are ultra-sensitive, pole in de pen dent Hall-effect switches with latched digital output. These sensors are es pe cial ly suited for operation in battery-operated, hand-held equip ment such as cellular and cordless tele phones, pagers, and p

MICROPOWER, ULTRA-SENSITIVE HALL-EF FECT SWITCH

Description The A 3211 and A3212 integrated circuits are ultra-sensitive, pole in de pen dent Hall-effect switches with latched digital output. These sensors are es pe cial ly suited for operation in battery-operated, hand-held equip ment such as cellular and cordless tele phones, pagers, and p

Micropower, Ultra-sensitive Hall-effect Switches

Description The A 3211 and A3212 integrated circuits are ultra-sensitive, pole in de pen dent Hall-effect switches with latched digital output. These sensors are es pe cial ly suited for operation in battery-operated, hand-held equip ment such as cellular and cordless tele phones, pagers, and p

Sensitive Hall Effect Switches for High-Temperature Operation

文件：717.54 Kbytes Page：9 Pages

封装/外壳：6-PowerWFDFN 功能：全极开关 包装：散装 描述：MAG SWITCH OMNIPOLAR 6MLP/DFN 传感器，变送器 磁性传感器 - 开关（固态）

封装/外壳：3-PowerXDFN 功能：全极开关 包装：散装 描述：MAGNETIC SWITCH OMNIPOLAR 3DFN 传感器，变送器 磁性传感器 - 开关（固态）

SEMICONDUCTORS

文件：2.43533 Mbytes Page：31 Pages

DC/DC Converter Applications

DC/DC Converter Applications Features • Adoption of MBIT processes. • High current capacitance. • Low collector-to-emitter saturation voltage. • Ultrasmall-sized package permitting applied sets to be made small and slim (0.9mm). • High allowable power dissipation. Applications • Relay driv

NPN Epitaxial Silicon Transistor

Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R=47KΩ) • Complement to FJNS4212R

Flash Programmable System Devices with 8032 Microcontroller Core and 16Kbit SRAM

FEATURES SUMMARY ■ The uPSD321X Devices combine a Flash PSD architecture with an 8032 microcontroller core. The uPSD321X Devices of Flash PSDs feature d)ual banks of Flash memory, SRAM, general purpose I/O and programmable logic, supervisory functions and access via I2C, ADC and PWM channels, and

Flash Programmable System Devices with 8032 Microcontroller Core and 16Kbit SRAM

FEATURES SUMMARY ■ The uPSD321X Devices combine a Flash PSD architecture with an 8032 microcontroller core. The uPSD321X Devices of Flash PSDs feature d)ual banks of Flash memory, SRAM, general purpose I/O and programmable logic, supervisory functions and access via I2C, ADC and PWM channels, and

Flash Programmable System Devices with 8032 Microcontroller Core and 16Kbit SRAM

FEATURES SUMMARY ■ The uPSD321X Devices combine a Flash PSD architecture with an 8032 microcontroller core. The uPSD321X Devices of Flash PSDs feature d)ual banks of Flash memory, SRAM, general purpose I/O and programmable logic, supervisory functions and access via I2C, ADC and PWM channels, and