丝印代码：A1727；High-voltage Switching Transistor (-400V, -0.5A)

High-voltage Switching Transistor (Telephone power supply) (-400V, -0.5A) Features 1) High breakdown voltage, BVCEO= -400V. 2) Low saturation voltage, typically VCE (sat) = -0.3V at IC / IB = -100mA / -10mA. 3) High switching speed, typically tf : 1μs at IC = -100mA. 4) Wide SOA (safe operati

丝印代码：A1727；High-voltage Switching Transistor ( 400V, 0.5A)

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High-voltage Switching Transistor ( 400V, 0.5A)

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High-voltage Switching Transistor (-400V, -0.5A)

1) High breakdown voltage, BVCEO= -400V.\n2) Low saturation voltage, typically VCE (sat) = -0.3V at IC / IB = -100mA / -10mA.\n3) High switching speed, typically tf : 1μs at IC = -100mA.\n4) Wide SOA (safe operating area).;

Integrated Circuit TV Signal Processor

Description: The NTE1727 is an integrated circuit designed for color TV deflection signal processing circuits. It can be operated with a 12V power supply and is suitable for compact and medium–sized color TV sets. Features: • Built–In Vertical Deflection Driver Circuit • Incorporatin

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The µPA1727 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Single chip type • Low On-state Resistance RDS(on)1 = 14 mΩ (TYP.) (VGS = 10 V, ID = 5.0 A) RDS(on)2 = 17 mΩ (TYP.) (VGS = 4.5 V, ID = 5.0 A) RDS(on)3 = 19

Micropower Precision Triple Supply Monitors in 8-Lead MSOP and 5-Lead SOT-23 Packages

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Stereo Audio DIGITAL-TO-ANALOG CONVERTER WITH PROGRAMMABLE DUAL PLL TM

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Isolated High Side IGBT Driver

文件：387.81 Kbytes Page：7 Pages