Continuous-Time Ratiometric Linear Hall Effect Sensors

Description The A1301 and A1302 are continuous-time, ratiometric, linear Hall-effect sensors. They are optimized to accurately provide a voltage output that is proportional to an applied magnetic field. These devices have a quiescent output voltage that is 50 of the supply voltage. Two output s

Continuous-Time Ratiometric Linear Hall Effect Sensors

Features and Benefits ▪ Low-noise output ▪ Fast power-on time ▪ Ratiometric rail-to-rail output ▪ 4.5 to 6.0 V operation ▪ Solid-state reliability ▪ Factory-programmed at end-of-line for optimum performance ▪ Robust ESD performance

Continuous-Time Ratiometric Linear Hall Effect Sensors

Description The A1301 and A1302 are continuous-time, ratiometric, linear Hall-effect sensors. They are optimized to accurately provide a voltage output that is proportional to an applied magnetic field. These devices have a quiescent output voltage that is 50 of the supply voltage. Two output s

封装/外壳：3-SSIP 包装：管件 描述：SENSOR HALL EFFECT ANALOG 3SIP 传感器，变送器 磁性传感器 - 线性，罗盘（IC）

Continuous-Time Ratiometric Linear Hall Effect Sensor ICs

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Continuous-Time Ratiometric Linear Hall-Effect Sensor ICs

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封装/外壳：3-SSIP 包装：卷带（TR） 描述：IC LINEAR HALL SENSOR 3SIP 传感器，变送器 磁性传感器 - 线性，罗盘（IC）

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS MJL1302A -->PNP MJL3281A -->NPN • The MJL3281A and MJL1302A are PowerBase power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency • Gai

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS MJL1302A -->PNP MJL3281A -->NPN • The MJL3281A and MJL1302A are PowerBase power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency • Gai

TMOS POWER FET 42 AMPERES 30 VOLTS RDS(on) = 22 mohm

This advanced high cell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplie

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 250 WATTS

Complementary NPN-PNP Silicon Power Bipolar Transistor The MJ3281A and MJ1302A are PowerBase power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency • Gain Complementary: — Gain Linearity from 100 mA to 7 A — Hi

MEDIUM POWER AMPLIFIER GaAs MMIC

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