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N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description\nThe Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.▼ Low Gate Charge\n▼ Capable of 2.5V gate drive\n▼ Single Drive Requirement\n▼ RoHS Compliant

APEC

富鼎先进

N-Channel 30-V (D-S) MOSFET

文件:1.01519 Mbytes Page:8 Pages

VBSEMI

微碧半导体

N-Channel 30-V (D-S) MOSFET

文件:959.92 Kbytes Page:8 Pages

VBSEMI

微碧半导体

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. ▼ Low Gate Charge ▼ Capable of 2.5V gate drive ▼ Single Drive Requirement ▼ RoHS Compliant

A-POWER

富鼎先进电子

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. ▼ Low Gate Charge ▼ Capable of 2.5V gate drive ▼ Single Drive Requirement ▼ RoHS Compliant

A-POWER

富鼎先进电子

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件:287.5 Kbytes Page:4 Pages

A-POWER

富鼎先进电子

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件:243 Kbytes Page:4 Pages

GTM

勤益投资控股

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件:247.89 Kbytes Page:4 Pages

GTM

勤益投资控股

更新时间:2026-5-23 9:06:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ap
2023+
to-252
58000
进口原装,现货热卖

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