9A, 950V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 9N95 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)

9A, 950V N-CHANNEL POWER MOSFET

The UTC 9N95 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent R DS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. • RDS(ON) = 1.4Ω @VGS = 10 V \n• Low Reverse Transfer Capacitance ( C RSS = Typical 14 pF ) \n• Avalanche Energy Specified \n• Improved dv/dt Capability, High Ruggedness;

9A, 950V N-CHANNEL  POWER MOSFET

The UTC 9N95-E uses UTC!ˉs advanced proprietary, planarstripe, DMOS technology to provide excellent R , low gate DS(ON)charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. • RDS(ON) < 1.4 @ V GS = 10V,  I D = 4.5A \n• Low Reverse Transfer Capacitance ( C\n• Avalanche Energy Specified \n• Improved dv/dt Capability, High Ruggedness;

9A, 950V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 9N95 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)

9A, 950V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 9N95 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)

N-CHANNEL POWER MOSFET

文件：263.88 Kbytes Page：6 Pages

N-CHANNEL POWER MOSFET

文件：263.88 Kbytes Page：6 Pages

N-CHANNEL POWER MOSFET

文件：263.88 Kbytes Page：6 Pages

N-CHANNEL MOSFET

APPLICATIONS  High efficiency switch mode power supplies  Electronic lamp ballasts based on half bridge  LED power supplies FEATURES Planar MOS Low gate charge Low Crss (typical 17pF ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product

丝印代码：JCS9N95CA；N-CHANNEL MOSFET

APPLICATIONS  High efficiency switch mode power supplies  Electronic lamp ballasts based on half bridge  LED power supplies FEATURES Planar MOS Low gate charge Low Crss (typical 17pF ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product

N-CHANNEL MOSFET

APPLICATIONS  High efficiency switch mode power supplies  Electronic lamp ballasts based on half bridge  LED power supplies FEATURES Planar MOS Low gate charge Low Crss (typical 17pF ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product

丝印代码：JCS9N95WA；N-CHANNEL MOSFET

APPLICATIONS  High efficiency switch mode power supplies  Electronic lamp ballasts based on half bridge  LED power supplies FEATURES Planar MOS Low gate charge Low Crss (typical 17pF ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product