9 Amps, 800 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 9N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy

9A, 800V N-CHANNEL POWER MOSFET

• RDS(on) = 1.3Ω @VGS = 10 V \n• Lower Input Capacitance \n• Lower Leakage Current: 25 μA (Max.) @ VDS = 800V;

Fast Switching Speed

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9A, 800V N-CHANNEL POWER MOSFET

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丝印代码：9N80K5；N-channel 800 V, 0.73 Ω typ., 7 A MDmesh™ K5 Power MOSFET in a DPAK package

Features • Industry’s lowest RDS(on) x area • Industry’s best figure of merit (FoM) • Ultra-low gate charge • 100 avalanche tested • Zener-protected Applications • Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology

丝印代码：9N80K5；N-channel 800 V, 0.73 Ω typ., 7 A MDmesh™ K5 Power MOSFETs in a TO-220 and TO-247 packages

Features  Industry’s lowest RDS(on) x area  Industry’s best FoM (figure of merit)  Ultra-low gate charge  100 avalanche tested  Zener-protected Applications  Switching applications Description These very high voltage N-channel Power MOSFET are designed using MDmesh™ K5 technol

丝印代码：9N80K5；N-channel 800 V, 0.73 Ω typ., 7 A MDmesh™ K5 Power MOSFETs in a TO-220 and TO-247 packages

Features  Industry’s lowest RDS(on) x area  Industry’s best FoM (figure of merit)  Ultra-low gate charge  100 avalanche tested  Zener-protected Applications  Switching applications Description These very high voltage N-channel Power MOSFET are designed using MDmesh™ K5 technol

9 Amps, 800 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 9N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy

9 Amps, 800 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 9N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy

9A, 800V N-CHANNEL POWER MOSFET

文件：203.39 Kbytes Page：5 Pages

isc N-Channel MOSFET Transistor

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9A, 800V N-CHANNEL POWER MOSFET

文件：203.39 Kbytes Page：5 Pages

9A, 800V N-CHANNEL POWER MOSFET

文件：203.39 Kbytes Page：5 Pages

9A, 800V N-CHANNEL POWER MOSFET

文件：203.39 Kbytes Page：5 Pages

9A, 800V N-CHANNEL POWER MOSFET

文件：203.39 Kbytes Page：5 Pages

9A, 800V N-CHANNEL POWER MOSFET

文件：203.39 Kbytes Page：5 Pages

9A, 800V N-CHANNEL POWER MOSFET

文件：203.39 Kbytes Page：5 Pages

HiPerFET Power MOSFETs - N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family

N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast i

HiPerFET Power MOSFETs Q-Class

N-Channel Enhancement Mode Avalanche Rated Low Qg,High dv/dt Features ● IXYS advanced low Qg process ● Low gate charge and capacitances - easier to drive - faster switching ● International standard packages ● Low RDS (on) ● Unclamped Inductive Switching (UIS) rated ● Molding epox

HiPerFET Power MOSFETs Q-Class

N-Channel Enhancement Mode Avalanche Rated Low Qg,High dv/dt Features ● IXYS advanced low Qg process ● Low gate charge and capacitances - easier to drive - faster switching ● International standard packages ● Low RDS (on) ● Unclamped Inductive Switching (UIS) rated ● Molding epox

Advanced Power MOSFET

BVDSS = 800 V RDS(on) = 1.3 Ω ID = 9 A FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 800V Low RDS(ON) : 1.000 Ω (Typ.)