丝印代码：9N150；N-channel 1500 V - 1.8 Ω - 8 A - TO-247 very high voltage PowerMESH™ Power MOSFET

Features ■ 100% avalanche tested ■ Avalanche ruggedness ■ Gate charge minimized ■ Very low intrinsic capacitances ■ High speed switching ■ Very low on-resistance Application ■ Switching applications Description Using the well consolidated high voltage MESH OVERLAY™ process, STMi

N-channel 1500 V - 1.8 Ω - 8 A - TO-247 very high voltage PowerMESH™ Power MOSFET

Features ■ 100% avalanche tested ■ Avalanche ruggedness ■ Gate charge minimized ■ Very low intrinsic capacitances ■ High speed switching ■ Very low on-resistance Application ■ Switching applications Description Using the well consolidated high voltage MESH OVERLAY™ process, STMi

9.0A, 1500V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 9N150 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES0 * RDS(ON) ≤ 2.1 Ω @ VGS=10V, ID=4.5A * Low Reverse Transfer Capacitance * Fast Switching Capab

9.0A, 1500V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 9N150 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES0 * RDS(ON) ≤ 2.1 Ω @ VGS=10V, ID=4.5A * Low Reverse Transfer Capacitance * Fast Switching Capab

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.5Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

N-channel 1500V - 2.2廓 - 8A - TO-247 Very high voltage PowerMESH??Power MOSFET

文件：151.31 Kbytes Page：9 Pages

N-channel 1500V - 2.2廓 - 8A - TO-247 Very high voltage PowerMESH??Power MOSFET

文件：151.31 Kbytes Page：9 Pages