9.0A, 1500V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 9N150 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES0 * RDS(ON) ≤ 2.1 Ω @ VGS=10V, ID=4.5A * Low Reverse Transfer Capacitance * Fast Switching Capab

N-channel 1500 V - 1.8 Ω - 8 A - TO-247 very high voltage PowerMESH™ Power MOSFET

Features ■ 100% avalanche tested ■ Avalanche ruggedness ■ Gate charge minimized ■ Very low intrinsic capacitances ■ High speed switching ■ Very low on-resistance Application ■ Switching applications Description Using the well consolidated high voltage MESH OVERLAY™ process, STMi

9.0A, 1500V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 9N150 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES0 * RDS(ON) ≤ 2.1 Ω @ VGS=10V, ID=4.5A * Low Reverse Transfer Capacitance * Fast Switching Capab

N-CHANNEL MOSFET

APPLICATIONS  High efficiency switch mode power supplies  Electronic lamp ballasts based on half bridge  UPS FEATURES Low gate charge Low Crss (typical 10 pF ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product

N-CHANNEL MOSFET

APPLICATIONS  High efficiency switch mode power supplies  Electronic lamp ballasts based on half bridge  UPS FEATURES Low gate charge Low Crss (typical 10 pF ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product

N-CHANNEL MOSFET

APPLICATIONS  High efficiency switch mode power supplies  Electronic lamp ballasts based on half bridge  UPS FEATURES Low gate charge Low Crss (typical 10 pF ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product