Steering Diode Arrays - ESD Suppressors

Features • (16kV) IEC 61000-4-2 capable • Fast Reverse Recovery Time • Fast Turn on Time • Low Capacitance • SMD Packages Applications • Signal Termination • Signal Conditioning • ESD Suppression • Transient Suppression

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=9.3A@ TC=25℃ ·Drain Source Voltage -VDSS=80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.21Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

80V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a

80V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

80V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a

BEAM PENTODE FOR AF POWER-AMPLIFIER APPLICATIONS

8 POS VERT P.C.B. M/J ASSY SHIELDED

Quad 2-Input AND Gates

Quad 2-Input AND Gates

TRANSISTOR TRANSISTOR LOGIC

QUADRUPLE 2-INPUT POSITIVE-AND GATES

QUADRUPLE 2-INPUT POSITIVE-AND GATES

QUADRUPLE 2-INPUT POSITIVE-AND GATES

QUADRUPLE 2-INPUT POSITIVE-AND GATES

QUADRUPLE 2-INPUT POSITIVE-AND GATES

QUADRUPLE 2-INPUT POSITIVE-AND GATES

QUADRUPLE 2-INPUT POSITIVE-AND GATES