N-channel dual-gate MOS-FET

DESCRIPTION Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate. FEATURES • Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. APPLICATIONS • VHF a

N-channel dual-gate MOS-FET

DESCRIPTION Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate. FEATURES • Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. APPLICATIONS • VHF a

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

Features Integrated gate protection diodes High cross modulation performance Low noise figure High AGC-range Low feedback capacitance Low input capacitance Applications Input- and mixer stages especially VHF TV-tuners.  

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

Features Integrated gate protection diodes High cross modulation performance Low noise figure High AGC-range Low feedback capacitance Low input capacitance Applications Input- and mixer stages especially VHF TV-tuners.  

Integrated Circuit Voltage Controlled Oscillator

Description: The NTE994M is a general purpose voltage controlled oscillator in an 8–Lead DIP type package which may be used to generate square and triangular waves, the frequency of which is a very linear function of a control voltage. The frequency is also a function of an external resistor and