丝印代码：947A；Silicon Planar Zener Diodes

FEATURES • Total power dissipation: Max. 1.5 W. • Wide zener reverse voltage range 3.3V to 240V. • Small plastic package suitable for surface mounted design. MECHANICAL DATA • Case: SMA • Terminals: Solderable per MIL-STD-750, Method 2026 • Approx. Weight: 0.055g / 0.002oz

丝印代码：947A；Silicon Planar Zener Diodes

FEATURES ♦ Total power dissipation: Max. 1.5 W. ♦ Wide zener reverse voltage range 3.3V to 240V. ♦ Small plastic package suitable for surface mounted design. ♦ Lead free in comply with EU RoHS 2011/65/EU directives MECHANICAL DATA ♦ Case: DO-214AC/SMA ♦ Terminals: Solderable per MIL-STD-750

丝印代码：947A；PLASTIC-ENCAPSULATE ZENER DIODE

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丝印代码：947A；Surface Mount Silicon Zener Diodes

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LOW VOLTAGE 1:9 CLOCK DISTRIBUTION CHIP

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Integrated Circuit Dual Operational Amplifier

Description: The NTE947 and NTE947D are general purpose dual operational amplifiers in a 10–Lead Metal Can and 14–Lead DIP type packages respectively. These two amplifiers share a common bias network and power supply leads. Otherwise, their operation is completely independent. Features:

UHF wideband transistor

DESCRIPTION Silicon NPN transistor in a surface mount 3-pin SOT323 package. The transistor is primarily intended for wideband applications in the GHz-range in the RF front end of analog and digital cellular telephones, cordless phones, radar detectors, pagers and satellite TV-tuners. FEATURES •

ULTRA-LOW LEAKAGE ABRUPT VARACTOR DIODES

ULTRA-LOW LEAKAGE ABRUPT VARACTOR DIODES

ULTRA-LOW LEAKAGE ABRUPT VARACTOR DIODES

ULTRA-LOW LEAKAGE ABRUPT VARACTOR DIODES