1K Microwire Compatible Serial EEPROM

Features: • Low-Power CMOS Technology • ORG Pin to Select Word Size for ‘46C’ Version • 128 x 8-bit Organization ‘A’ Devices (no ORG) • 64 x 16-bit Organization ‘B’ Devices (no ORG) • Self-Timed Erase/Write Cycles (including Auto-Erase) • Automatic Erase All (ERAL) Before Write All (WRAL) •

64횞16bits serial EEPROM

The BR93LC46-W series are CMOS serial input / output-type memory circuits (EEPROMs) that can be programmed electrically. Each is configured of 64 words × 16 bits (1,024 bits), and each word can be accessed individually and data read from it and written to it. Operation control is performed using f

64횞16bits serial EEPROM

The BR93LC46-W series are CMOS serial input / output-type memory circuits (EEPROMs) that can be programmed electrically. Each is configured of 64 words × 16 bits (1,024 bits), and each word can be accessed individually and data read from it and written to it. Operation control is performed using f

64횞16bits serial EEPROM

The BR93LC46-W series are CMOS serial input / output-type memory circuits (EEPROMs) that can be programmed electrically. Each is configured of 64 words × 16 bits (1,024 bits), and each word can be accessed individually and data read from it and written to it. Operation control is performed using f

64횞16bits serial EEPROM

The BR93LC46-W series are CMOS serial input / output-type memory circuits (EEPROMs) that can be programmed electrically. Each is configured of 64 words × 16 bits (1,024 bits), and each word can be accessed individually and data read from it and written to it. Operation control is performed using f

64횞16bits serial EEPROM

The BR93LC46-W series are CMOS serial input / output-type memory circuits (EEPROMs) that can be programmed electrically. Each is configured of 64 words × 16 bits (1,024 bits), and each word can be accessed individually and data read from it and written to it. Operation control is performed using f