PNP SILICON TRANSISTOR

928S Transistor Chip Manual █ Introduction to the chip Chip size: 4 inches (100mm) Chip code: A080BJ-03 Chip thickness: 240±20µm Die size: 800× 800µm 2 Welding position size: B pole 124×124µm 2; E pole 221×110µm 2 Electrode metal: aluminum Back metal: gold

Integrated Circuit Low Power Dual Operational Amplifier

Description: Utilizing the circuit designs perfected for recently introduced Quad Operational Amplifiers, the NTE928M/NTE928SM dual operational amplifier features low power drain, a common mode input voltage range extending to ground/VEE, and Single Supply or Split Supply Operation. Th

Integrated Circuit Low Power Dual Operational Amplifier

Description: Utilizing the circuit designs perfected for recently introduced Quad Operational Amplifiers, the NTE928S dual operational amplifier features low power drain, a common mode input voltage range extending to ground/VEE, and Single Supply or Split Supply Operation. Features: ● Short Ci

Integrated Circuit Low Power Dual Operational Amplifier

Description: Utilizing the circuit designs perfected for recently introduced Quad Operational Amplifiers, the NTE928M/NTE928SM dual operational amplifier features low power drain, a common mode input voltage range extending to ground/VEE, and Single Supply or Split Supply Operation. Th

Shortcircuit Protector Circuit Built-in OPIC Photocoupler Suitable for Inverter-Driving IGBT

❈ TÜV ( VDE 0884 ) approved type is also available as an option. ■ Features 1. Built-in IGBT shortcircuit protector circuit 2. Built-in direct drive circuit for IGBT drive (Peak output current ... I , I : MAX. 0.4A) O1P O2P 3. High isolation voltage (V : 4 000V ) iso rms 4. Half lead pin

PHOTOMULTlPLlER TUBES

Extended Red, High Sensitivity, Multialkali Photocathode 28 mm (1-1/8 Inch) Diameter, 9-Stage, Side-On Type The R928 and R955 feature extremely high quantum efficiency, high current amplification, good S/N ratio and wide spectral response from UV to near infrared. The R928 employs a UV glass