丝印代码：913B；Silicon Planar Zener Diodes

FEATURES • Total power dissipation: Max. 1.5 W. • Wide zener reverse voltage range 3.3V to 240V. • Small plastic package suitable for surface mounted design. MECHANICAL DATA • Case: SMA • Terminals: Solderable per MIL-STD-750, Method 2026 • Approx. Weight: 0.055g / 0.002oz

丝印代码：913B；Silicon Planar Zener Diodes

FEATURES ♦ Total power dissipation: Max. 3 W. ♦ Wide zener reverse voltage range 3.3V to 200V. ♦ plastic package suitable for surface mounted design. ♦ Lead free in comply with EU RoHS 2011/65/EU directives MECHANICAL DATA ♦ Case: DO-214AA/SMB ♦ Terminals: Solderable per MIL-STD-750, Method

丝印代码：913B；SURFACE MOUNT SILICON ZENER DIODES

Vz : 3.3 - 200 Volts, Pd : 3 Watts Features • Total power dissipation: Max. 3 W. • Wide zener reverse voltage range 3.3V to 200V. • Small plastic package suitable for surface mounted design. Mechanical Data • Case: SMB • Terminals: Solderable per MIL-STD-750, Method 2026 • Approx. Weight:

丝印代码：913B；3.0W SURFACE MOUNT ZENER DIODE

Glass Passivated Die Construction 3.0W Power Dissipation 3.3V – 200V Nominal Zener Voltage 5 Standard Vz Tolerance Low Inductance For Use in Voltage Regulator or Reference Plastic Case Material has UL Flammability Classification Rating 94V-0

丝印代码：913B；SURFACE MOUNT ZENER DIODE

Features ◆ Small plastic package suitable for surface mounted design.

丝印代码：913B；Surface Mount Zener Voltage Regulators

FEATURES • Total power dissipation: Max. 3 W. • Wide zener reverse voltage range 3.3V to 200V. • Small plastic package suitable for surface mounted design. MECHANICAL DATA • Case: SMB • Terminals: Solderable per MIL-STD-750, Method 2026 • Approx. Weight: 0.095g / 0.0034oz

丝印代码：913B；3 Watt Plastic Surface Mount Zener Voltage Regulators

3 Watt Plastic Surface Mount Zener Voltage Regulators This complete new line of 3 Watt Zener diodes offers the following advantages. Features •Zener Voltage Range − 3.3 V to 200 V •ESD Rating of Class 3 (>16 kV) per Human Body Model •Flat Handling Surface for Accurate Placement •Package Desi

丝印代码：913B；Silicon Planar Zener Diodes

文件：463.41 Kbytes Page：3 Pages

14 WATT 880-915 MHz RF POWER AMPLIFIER

UHF Silicon FEt Power Amplifier Designed specifically for the Pan European digital 8.0 watt, GSM mobile radio. The MHW913 is capable of wide power range control, operates from a 12.5 volt supply and requires less than 100 mW of RF input power. • Specified 12.5 V Characteristics RF

MOSMIC for TV-Tuner Prestage with 9 V Supply Voltage

MOSMIC - MOS Monolithic Integrated Circuit Features ● Integrated gate protection diodes ● Low noise figure ● High gain ● Biasing network on chip ● Improved cross modulation at gain reduction ● High AGC-range ● SMD package Applications    Low noise gain controlled input stages in UHF-and

MOSMIC for TV-Tuner Prestage with 9 V Supply Voltage

MOSMIC - MOS Monolithic Integrated Circuit Features ● Integrated gate protection diodes ● Low noise figure ● High gain ● Biasing network on chip ● Improved cross modulation at gain reduction ● High AGC-range ● SMD package Applications    Low noise gain controlled input stages in UHF-and

DUAL AUTO-ZEROED OPERATIONAL AMPLIFIERS

文件：48.85 Kbytes Page：4 Pages

DUAL AUTO-ZEROED OPERATIONAL AMPLIFIERS

文件：48.85 Kbytes Page：4 Pages