9100 Series Capacitors Working Voltage > 100V

MACOM's 91 series of chip capacitors features silicon nitride/silicon dioxide dielectric layers for high reliability and stable capacitance over time. These metal-insulator-semiconductor (MIS) capacitors have high insulation resistance and low dissipation factor for excellent high frequency performa ·High Working Voltage: 100 V\n·RoHS Compliant\n·Excellent Stability\n·Wide Range of Capacitance: 0.1 to 399 pF\n;

9100 Series Capacitors Working Voltage > 100V

MACOM's 91 series of chip capacitors features silicon nitride/silicon dioxide dielectric layers for high reliability and stable capacitance over time. These metal-insulator-semiconductor (MIS) capacitors have high insulation resistance and low dissipation factor for excellent high frequency performa ·High Working Voltage: 100 V\n·RoHS Compliant\n·Excellent Stability\n·Wide Range of Capacitance: 0.1 to 399 pF;

9100 Series Capacitors Working Voltage > 100V

MACOM's 91 series of chip capacitors features silicon nitride/silicon dioxide dielectric layers for high reliability and stable capacitance over time. These metal-insulator-semiconductor (MIS) capacitors have high insulation resistance and low dissipation factor for excellent high frequency performa ·High Working Voltage: 100 V\n·RoHS Compliant\n·Excellent Stability\n·Wide Range of Capacitance: 0.1 to 399 pF\n;

The 91 Series of chip capacitors features silicon nitride/silicon dioxide dielectric layers for high reliability and stable capacitance over time.

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封装/外壳：非标准型 SMD 包装：托盘 描述：CAP SILICON 0.3PF 5% SMD 电容器 硅电容器

封装/外壳：非标准型 SMD 包装：托盘 描述：CAP SILICON 0.4PF 10% SMD 电容器 硅电容器

VHF variable capacitance diode

DESCRIPTION The BB910 is a variable capacitance diode, fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD68 (DO-34) package. FEATURES • Excellent linearity • Matched to 2.5 • Hermetically sealed leaded glass SOD68 (DO-34) package • C28: 2.5; ratio:

POWER TRANSISTORS(15A,90W)

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The BD909 and BD911 are silicon Epitaxial-Base NPN power transistors mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are BD910 and BD912 respectively. ■ STMicroelectronics PREFERRED SALESTYPES

UHF power transistor

DESCRIPTION NPN silicon planar epitaxial transistor intended for common emitter class-AB operation. The transistor is encapsulated in a 6-lead SOT171 flange envelope with a ceramic cap. All leads are isolated from the flange. FEATURES • Internal input matching to achieve high power gain

Variable gain RF predriver amplifier

DESCRIPTION The SA910 is a variable gain predriver amplifier designed for handheld analog cellular telephones. When used with a UHF power transistor, it forms a cost-effective, low-profile, surface mount power amplifier solution (1.2W maximum PAE > 50). The SA910 integrates power detection and