SB® 350 Connectors Up to 500 Amps

The SB® 350 is the largest connector in the series with power capabilities up to 500 amps with a 350 mcm wire. Wires ranging from 1/0 to 350 mcm (53.5 to 185 mm²) fit into the one piece housing available in standard PC or a chemical resistant PBT/PC blend. Silver plated wire or busbar contact

包装：散装 描述：SB350 CONT.300MCM 1C0608P19 连接器，互连器件 插片式电源连接器触头

压线端子

VHF variable capacitance diode

DESCRIPTION The BB910 is a variable capacitance diode, fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD68 (DO-34) package. FEATURES • Excellent linearity • Matched to 2.5 • Hermetically sealed leaded glass SOD68 (DO-34) package • C28: 2.5; ratio:

POWER TRANSISTORS(15A,90W)

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The BD909 and BD911 are silicon Epitaxial-Base NPN power transistors mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are BD910 and BD912 respectively. ■ STMicroelectronics PREFERRED SALESTYPES

UHF power transistor

DESCRIPTION NPN silicon planar epitaxial transistor intended for common emitter class-AB operation. The transistor is encapsulated in a 6-lead SOT171 flange envelope with a ceramic cap. All leads are isolated from the flange. FEATURES • Internal input matching to achieve high power gain

Variable gain RF predriver amplifier

DESCRIPTION The SA910 is a variable gain predriver amplifier designed for handheld analog cellular telephones. When used with a UHF power transistor, it forms a cost-effective, low-profile, surface mount power amplifier solution (1.2W maximum PAE > 50). The SA910 integrates power detection and