Axial Lead Chokes

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Schottky barrier rectifier diodes

DESCRIPTION The BYG 90-40 series consists of Schottky barrier rectifier diodes, fabricated in planar technology, and encapsulated in rectangular SOD106A plastic SMD packages. FEATURES • Low switching losses • Capability of absorbing very high surge current • Fast recovery time

丝印代码：H90L40J；N-channel 40 V, 0.94 mΩ, 300 A logic level MOSFET in LFPAK56E using NextPower-S3 Schottky-Plus technology

1. General description 300 Amp, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56E package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. 2. Features and benefits • 300

N-channel 40 V, 1 mOhm, standard level MOSFET in LFPAK56

1. General description 220 Amp, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. 2. Features and benefits • 2

Discrete and MOSFET components, analog & logic ICs

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