丝印代码：827B；1.5W SURFACE MOUNT ZENER DIODE

Glass Passivated Die Construction 1.5W Power Dissipation 3.3V – 200V Nominal Zener Voltage 5 Standard Vz Tolerance Low Inductance For Use in Voltage Regulator or Reference Plastic Case Material has UL Flammability Classification Rating 94V-0

丝印代码：827B；1.5 Watt Plastic Surface Mount Zener Voltage Regulators

Features • Standard Zener Breakdown Voltage Range − 3.3 V to 68 V • ESD Rating of Class 3 (> 16 kV) per Human Body Model • Flat Handling Surface for Accurate Placement • Package Design for Top Slide or Bottom Circuit Board Mounting • Low Profile Package • Ideal Replacement for MELF Packages

丝印代码：827B；1.5 Watt Plastic Surface Mount Zener Voltage Regulators

Features • Standard Zener Breakdown Voltage Range − 3.3 V to 68 V • ESD Rating of Class 3 (> 16 kV) per Human Body Model • Flat Handling Surface for Accurate Placement • Package Design for Top Slide or Bottom Circuit Board Mounting • Low Profile Package • Ideal Replacement for MELF Packages

Surface Mount Zener Diodes

Features ● lat Handling Surface for Accurate Placement ● tandard Zener Breakdown Voltage Range -3.3V to 68V ● ow Profile Package

Modulink??880MP Series Floor Boxes

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Optocoupler, Phototransistor Output

Description In the K817P/ K827PH/ K847PH parts each channel consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-pin (single); 8 pin (dual); 16-pin (quad) plastic dual inline package. The elements are mounted on one leadframe providing a fixed d

High Density Mounting Type Photocoupler

PC817X Seriescontains an IRED optically coupled to a phototransistor. ( PC817A, PC817B, PC817C, PC817D ) It is packaged in a 4pin DIP, available in wide-lead spacing option and SMT gullwing lead-form option. Input-output isolation voltage(rms) is 5.0kV.Collector-emitter voltage is 80V(*) and CTR i

High Density Mounting Type Photocoupler

PC817X Seriescontains an IRED optically coupled to a phototransistor. ( PC817A, PC817B, PC817C, PC817D ) It is packaged in a 4pin DIP, available in wide-lead spacing option and SMT gullwing lead-form option. Input-output isolation voltage(rms) is 5.0kV.Collector-emitter voltage is 80V(*) and CTR i

NPN SILICON EPITAXIAL TWIN TRANSISTOR

FEATURES • High gain with low operating current |S21e|2 = 9 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz • 6-pin thin-type small mini mold package • Built-in 2 transistors (2 u 2SC5179)

10-BIT BUFFER/DRIVER WITH 3-STATE OUTPUTS

文件：279.33 Kbytes Page：13 Pages