位置：首页 > IC中文资料第9682页 > 7N60ZL
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
N-CHANNEL ENHANCEMENT MODE POWER MOSFET 文件：180.46 Kbytes Page：6 Pages | UTC 友顺 |   | ||
7.4A, 600V N-CHANNEL POWER MOSFET 文件：184.15 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-Channel 650V (D-S) Power MOSFET 文件：1.10567 Mbytes Page：10 Pages | VBSEMI 微碧半导体 | | ||
N-CHANNEL ENHANCEMENT MODE POWER MOSFET 文件：180.46 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL ENHANCEMENT MODE POWER MOSFET 文件：180.46 Kbytes Page：6 Pages | UTC 友顺 | | ||
7.4A, 600V N-CHANNEL POWER MOSFET 文件：184.15 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL ENHANCEMENT MODE POWER MOSFET 文件：180.46 Kbytes Page：6 Pages | UTC 友顺 | | ||
7.4A, 600V N-CHANNEL POWER MOSFET 文件：184.15 Kbytes Page：6 Pages | UTC 友顺 | | ||
7.4 Amps, 600/650 Volts N-CHANNEL MOSFET 文件：213.02 Kbytes Page：6 Pages | UTC 友顺 | | ||
7.4 Amps, 600/650 Volts N-CHANNEL MOSFET 文件：213.02 Kbytes Page：6 Pages | UTC 友顺 | | ||
7.4 Amps, 600/650 Volts N-CHANNEL MOSFET 文件：213.02 Kbytes Page：6 Pages | UTC 友顺 | | ||
Insulated Gate Bipolar Transistor This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on) | ONSEMI 安森美半导体 | | ||
Insulated Gate Bipolar Transistor This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on) | MOTOROLA 摩托罗拉 | | ||
Insulated Gate Bipolar Transistor withr Anti-Parallel Diode This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both | ONSEMI 安森美半导体 | | ||
PowerMOS transistors Avalanche energy rated GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP7N60E is supplied | PHILIPS 飞利浦 | | ||
PowerMOS transistors Avalanche energy rated GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motorcontrol circuits and general purpose switching applications. The PHX7N60E is supplied | PHILIPS 飞利浦 | |
7N60ZL产品属性
- 类型
描述
- 型号
7N60ZL
- 制造商
UTC-IC
- 制造商全称
UTC-IC
- 功能描述
7.4A, 600V N-CHANNEL POWER MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
UTC友顺 |
20+ |
TO-251 |
38900 |
原装优势主营型号-可开原型号增税票 |
|||
GL |
21+ |
TO-220F |
300000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
士兰微 |
23+ |
TO-220F |
16000 |
原装正品假一罚百!可开增票! |
|||
士兰微 |
23+ |
TO-220F |
16000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
|||
CJ/长电 |
23+ |
TO-220F |
251188 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
华晶 |
TO-220F |
50000 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
INFINEON/英飞凌 |
25+ |
TO-220F |
880000 |
明嘉莱只做原装正品现货 |
|||
KEC |
21+ |
TO220F |
120000 |
长期代理优势供应 |
|||
MM |
25+23+ |
TO-220F |
38891 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
士兰微 |
24+ |
TO-220F |
998031 |
代理原装正品现货低价假一赔十 |
7N60ZL规格书下载地址
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7N60ZL数据表相关新闻
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原装现货
2020-11-177MB140N-120
7MB140N-120，全新原装当天发货或门市自取0755-82732291.
2020-6-217N65KL-TF1-T
联系人：陈先生 电话：18018738768（微信同号） QQ：1005525513 我司有一手货源，价优，可以长期提供大量，优质的货源，专业的渠道，物美价廉是公司与客户之间共同的理念 由于公司型号众多，无法一一上传，如在网站找不到您要的产品，请联系业务员，本司可提供电子元器件配单服务 我司部分现货库存如下： HR911163A
2020-4-157MBP75KB060
7MBP75KB060，全新原装当天发货或门市自取0755-82732291.
2019-10-16
DdatasheetPDF页码索引
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