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型号 功能描述 生产厂家 企业 LOGO 操作
7N60G

N-CHANNEL POWER MOSFET

文件:2.48283 Mbytes Page:8 Pages

SUNMATE

森美特

7N60G

高压MOSFET

ETC

知名厂家

7.4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in swi

UTC

友顺

7.4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in swi

UTC

友顺

7.4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in swi

UTC

友顺

7.4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in swi

UTC

友顺

7.4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in swi

UTC

友顺

7.4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in swi

UTC

友顺

7.4A, 600V N-CHANNEL POWER MOSFET

文件:193.88 Kbytes Page:6 Pages

UTC

友顺

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:349.51 Kbytes Page:9 Pages

UTC

友顺

N-CHANNEL JFET CAPACITOR MICROPHONE APPLICATIONS

文件:341.65 Kbytes Page:8 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:205.31 Kbytes Page:6 Pages

UTC

友顺

N-CHANNEL ENHANCEMENT MODE

文件:205.31 Kbytes Page:6 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:204.93 Kbytes Page:6 Pages

UTC

友顺

N-CHANNEL ENHANCEMENT MODE

文件:205.31 Kbytes Page:6 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:205.31 Kbytes Page:6 Pages

UTC

友顺

N-CHANNEL JFET CAPACITOR MICROPHONE APPLICATIONS

文件:341.65 Kbytes Page:8 Pages

UTC

友顺

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:349.51 Kbytes Page:9 Pages

UTC

友顺

7.4A, 600V N-CHANNEL POWER MOSFET

文件:193.88 Kbytes Page:6 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:204.93 Kbytes Page:6 Pages

UTC

友顺

N-CHANNEL ENHANCEMENT MODE

文件:205.31 Kbytes Page:6 Pages

UTC

友顺

N-CHANNEL JFET CAPACITOR MICROPHONE APPLICATIONS

文件:341.65 Kbytes Page:8 Pages

UTC

友顺

7.4A, 600V N-CHANNEL POWER MOSFET

文件:193.88 Kbytes Page:6 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:204.93 Kbytes Page:6 Pages

UTC

友顺

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:349.51 Kbytes Page:9 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:205.31 Kbytes Page:6 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:204.93 Kbytes Page:6 Pages

UTC

友顺

N-CHANNEL JFET CAPACITOR MICROPHONE APPLICATIONS

文件:341.65 Kbytes Page:8 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:205.31 Kbytes Page:6 Pages

UTC

友顺

N-CHANNEL ENHANCEMENT MODE

文件:205.31 Kbytes Page:6 Pages

UTC

友顺

7.4A, 600V N-CHANNEL POWER MOSFET

文件:193.88 Kbytes Page:6 Pages

UTC

友顺

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:349.51 Kbytes Page:9 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:205.31 Kbytes Page:6 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:204.93 Kbytes Page:6 Pages

UTC

友顺

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:349.51 Kbytes Page:9 Pages

UTC

友顺

N-CHANNEL ENHANCEMENT MODE

文件:205.31 Kbytes Page:6 Pages

UTC

友顺

7.4A, 600V N-CHANNEL POWER MOSFET

文件:193.88 Kbytes Page:6 Pages

UTC

友顺

N-CHANNEL JFET CAPACITOR MICROPHONE APPLICATIONS

文件:341.65 Kbytes Page:8 Pages

UTC

友顺

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:349.51 Kbytes Page:9 Pages

UTC

友顺

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:349.51 Kbytes Page:9 Pages

UTC

友顺

N-CHANNEL JFET CAPACITOR MICROPHONE APPLICATIONS

文件:341.65 Kbytes Page:8 Pages

UTC

友顺

7.4A, 600V N-CHANNEL POWER MOSFET

文件:193.88 Kbytes Page:6 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:204.93 Kbytes Page:6 Pages

UTC

友顺

N-CHANNEL ENHANCEMENT MODE

文件:205.31 Kbytes Page:6 Pages

UTC

友顺

7.4A, 600V N-CHANNEL POWER MOSFET

文件:193.88 Kbytes Page:6 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:204.93 Kbytes Page:6 Pages

UTC

友顺

N-CHANNEL JFET CAPACITOR MICROPHONE APPLICATIONS

文件:341.65 Kbytes Page:8 Pages

UTC

友顺

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:349.51 Kbytes Page:9 Pages

UTC

友顺

N-CHANNEL ENHANCEMENT MODE

文件:205.31 Kbytes Page:6 Pages

UTC

友顺

Insulated Gate Bipolar Transistor

This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on)

ONSEMI

安森美半导体

Insulated Gate Bipolar Transistor

This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on)

MOTOROLA

摩托罗拉

Insulated Gate Bipolar Transistor withr Anti-Parallel Diode

This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both

ONSEMI

安森美半导体

PowerMOS transistors Avalanche energy rated

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP7N60E is supplied

PHILIPS

飞利浦

PowerMOS transistors Avalanche energy rated

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motorcontrol circuits and general purpose switching applications. The PHX7N60E is supplied

PHILIPS

飞利浦

7N60G产品属性

  • 类型

    描述

  • 型号

    7N60G

  • 制造商

    UTC-IC

  • 制造商全称

    UTC-IC

  • 功能描述

    7.4A, 600V N-CHANNEL POWER MOSFET

更新时间:2026-3-17 19:08:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
PINGWEI平伟
21+
TO-252
2500
一级代理,专注军工、汽车、医疗、工业、新能源、电力
UTC/友顺
21+
TO-220F1
6856
百域芯优势 实单必成 可开13点增值税
UTC/友顺
24+
NA
8000
只做原装,欢迎询价,量大价优
PINGWEI平伟
25+
TO-252
9000
只做原装正品 有挂有货 假一赔十
UTC/友顺
23+
TO-263
159998
原厂授权代理,海外优势订货渠道。可提供大量库存,详
PINGWEI(平伟)
2447
TO-252
105000
2500个/圆盘一级代理专营品牌!原装正品,优势现货,
UTC/友顺
2022+
TO-220
50000
原厂代理 终端免费提供样品
PINGWEI平伟
2023+
TO-252
8800
正品渠道现货 终端可提供BOM表配单。
PINGWEI平伟
24+
TO-252
60000
PINGWEI平伟
23+
TO-252
50000
全新原装正品现货,支持订货

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