| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
丝印代码：75R004M2；SiC MOSFET CoolSiC™ MOSFET 750 V G2 Features • Highly robust 750V technology, 100% avalanche tested • Best‑in‑class RDS(on) x Qfr • Excellent RDS(on) x Qoss and RDS(on) x QG • Unique combination of low Crss/Ciss and high VGS(th) • Infineon proprietary die attach technology • Cutting edge TSC package with material group I | INFINEON 英飞凌 |   | ||
丝印代码：75R007M2；SiC MOSFET CoolSiC™ MOSFET 750 V G2 Features • Highly robust 750V technology, 100% avalanche tested • Best‑in‑class RDS(on) x Qfr • Excellent RDS(on) x Qoss and RDS(on) x QG • Unique combination of low Crss/Ciss and high VGS(th) • Infineon proprietary die attach technology • Cutting edge TSC package with material group I | INFINEON 英飞凌 | | ||
丝印代码：75R008M1；CoolSiCª Power Device 750 V G1 Features • Highly robust 750V technology, 100% avalanche tested • Best-in-class RDS(on) x Qfr • Excellent RDS(on) x Qoss and RDS(on) x QG • Unique combination of low Crss/Ciss and high VGS(th) • Infineon proprietary die attach technology • Cutting edge top side cooling package (QDPAK) • | INFINEON 英飞凌 | | ||
丝印代码：75R016M1；CoolSiCª Power Device 750 V G1 Features • Highly robust 750V technology, 100% avalanche tested • Best-in-class RDS(on) x Qfr • Excellent RDS(on) x Qoss and RDS(on) x QG • Unique combination of low Crss/Ciss and high VGS(th) • Infineon proprietary die attach technology • Cutting edge top side cooling package (QDPAK) • | INFINEON 英飞凌 | | ||
丝印代码：75R016M2；SiC MOSFET CoolSiC™ MOSFET 750 V G2 Features • Highly robust 750V technology, 100% avalanche tested • Best‑in‑class RDS(on) x Qfr • Excellent RDS(on) x Qoss and RDS(on) x QG • Unique combination of low Crss/Ciss and high VGS(th) • Infineon proprietary die attach technology • Cutting edge TSC package with material group I | INFINEON 英飞凌 | | ||
丝印代码：75R020M1；MOSFET CoolSiCª Power Device 750 V G1 Features • Highly robust 750V technology, 100% avalanche tested • Best-in-class RDS(on) x Qfr • Excellent RDS(on) x Qoss and RDS(on) x QG • Unique combination of low Crss/Ciss and high VGS(th) • Infineon proprietary die attach technology • Cutting edge top side cooling package (QDPAK) • | INFINEON 英飞凌 | | ||
丝印代码：75R025M2；SiC MOSFET CoolSiC™ MOSFET 750 V G2 Features • Highly robust 750V technology, 100% avalanche tested • Best‑in‑class RDS(on) x Qfr • Excellent RDS(on) x Qoss and RDS(on) x QG • Unique combination of low Crss/Ciss and high VGS(th) • Infineon proprietary die attach technology • Cutting edge TSC package with material group I | INFINEON 英飞凌 | | ||
丝印代码：75R027M1；MOSFET CoolSiCª Power Device 750 V G1 Features • Highly robust 750V technology, 100% avalanche tested • Best-in-class RDS(on) x Qfr • Excellent RDS(on) x Qoss and RDS(on) x QG • Unique combination of low Crss/Ciss and high VGS(th) • Infineon proprietary die attach technology • Cutting edge top side cooling package (QDPAK) • | INFINEON 英飞凌 | | ||
丝印代码：75R040M1；CoolSiCª Power Device 750 V G1 Features • Highly robust 750V technology, 100% avalanche tested • Best-in-class RDS(on) x Qfr • Excellent RDS(on) x Qoss and RDS(on) x QG • Unique combination of low Crss/Ciss and high VGS(th) • Infineon proprietary die attach technology • Cutting edge top side cooling package (QDPAK) • | INFINEON 英飞凌 | | ||
丝印代码：75R060M1；MOSFET CoolSiCª Power Device 750 V G1 Features • Highly robust 750V technology, 100% avalanche tested • Best-in-class RDS(on) x Qfr • Excellent RDS(on) x Qoss and RDS(on) x QG • Unique combination of low Crss/Ciss and high VGS(th) • Infineon proprietary die attach technology • Cutting edge top side cooling package (QDPAK) • | INFINEON 英飞凌 | | ||
丝印代码：75R060M2；SiC MOSFET CoolSiC™ MOSFET 750 V G2 Features • Highly robust 750V technology, 100% avalanche tested • Best‑in‑class RDS(on) x Qfr • Excellent RDS(on) x Qoss and RDS(on) x QG • Unique combination of low Crss/Ciss and high VGS(th) • Infineon proprietary die attach technology • Cutting edge TSC package with material group I | INFINEON 英飞凌 | | ||
丝印代码：75R090M1；MOSFET CoolSiCª Power Device 750 V G1 Features • Highly robust 750V technology, 100% avalanche tested • Best-in-class RDS(on) x Qfr • Excellent RDS(on) x Qoss and RDS(on) x QG • Unique combination of low Crss/Ciss and high VGS(th) • Infineon proprietary die attach technology • Cutting edge top side cooling package (QDPAK) • | INFINEON 英飞凌 | | ||
丝印代码：75R008M1；CoolSiC™ M1 CoolSiC™ Power Device 750 V G1 Features • Highly robust 750V technology, 100% avalanche tested • Best‑in‑class RDS(on) x Qfr • Excellent RDS(on) x Qoss and RDS(on) x QG • Unique combination of low Crss/Ciss and high VGS(th) • Infineon proprietary die attach technology • Driver source pin available • Best‑in‑class RDS | INFINEON 英飞凌 | | ||
丝印代码：75R016M1；MOSFET CoolSiCª Power Device 750 V G1 Features • Highly robust 750V technology, 100% avalanche tested • Best-in-class RDS(on) x Qfr • Excellent RDS(on) x Qoss and RDS(on) x QG • Unique combination of low Crss/Ciss and high VGS(th) • Infineon proprietary die attach technology • Driver source pin available Benefits • Enhan | INFINEON 英飞凌 | | ||
丝印代码：75R020M1；MOSFET CoolSiCª Power Device 750 V G1 Features • Highly robust 750V technology, 100% avalanche tested • Best-in-class RDS(on) x Qfr • Excellent RDS(on) x Qoss and RDS(on) x QG • Unique combination of low Crss/Ciss and high VGS(th) • Infineon proprietary die attach technology • Driver source pin available Benefits • Enhan | INFINEON 英飞凌 | | ||
丝印代码：75R027M1；MOSFET CoolSiCª Power Device 750 V G1 Features • Highly robust 750V technology, 100% avalanche tested • Best-in-class RDS(on) x Qfr • Excellent RDS(on) x Qoss and RDS(on) x QG • Unique combination of low Crss/Ciss and high VGS(th) • Infineon proprietary die attach technology • Driver source pin available Benefits • Enhan | INFINEON 英飞凌 | | ||
丝印代码：75R040M1；MOSFET CoolSiCª Power Device 750 V G1 Features • Highly robust 750V technology, 100% avalanche tested • Best-in-class RDS(on) x Qfr • Excellent RDS(on) x Qoss and RDS(on) x QG • Unique combination of low Crss/Ciss and high VGS(th) • Infineon proprietary die attach technology • Driver source pin available Benefits • Enhan | INFINEON 英飞凌 | | ||
丝印代码：75R060M1；MOSFET CoolSiCª Power Device 750 V G1 Features • Highly robust 750V technology, 100% avalanche tested • Best-in-class RDS(on) x Qfr • Excellent RDS(on) x Qoss and RDS(on) x QG • Unique combination of low Crss/Ciss and high VGS(th) • Infineon proprietary die attach technology • Driver source pin available Benefits • Enhan | INFINEON 英飞凌 | | ||
丝印代码：75R090M1；MOSFET CoolSiCª Power Device 750 V G1 Features • Highly robust 750V technology, 100% avalanche tested • Best-in-class RDS(on) x Qfr • Excellent RDS(on) x Qoss and RDS(on) x QG • Unique combination of low Crss/Ciss and high VGS(th) • Infineon proprietary die attach technology • Driver source pin available Benefits • Enhan | INFINEON 英飞凌 | | ||
Hook and Loop Cable Ties 文件：715.85 Kbytes Page：4 Pages | PANDUIT | | ||
Product Bulletin 文件：723.53 Kbytes Page：2 Pages | PANDUIT | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon |
25+ |
PG-HDSOP-22 |
15500 |
英飞凌优势渠道全系列在售 |
|||
IMJECH |
06+ |
SMD |
3043 |
||||
IMTECH |
25+ |
LCC |
2650 |
原装优势!绝对公司现货 |
|||
IMTECH |
24+ |
SMD |
990000 |
明嘉莱只做原装正品现货 |
|||
IMTECH |
2016+ |
SMD |
1000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
IMTECH |
25+23+ |
SMD |
38937 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
IM-TECH |
0705+ |
手机开关 |
9939 |
原装现货海量库存欢迎咨询 |
|||
ROHM |
24+ |
SOT-163SOT-23-6 |
7390 |
新进库存/原装 |
|||
MOT |
03/04+ |
PLCC44 |
94 |
全新原装100真实现货供应 |
|||
IM-TECH |
22+ |
手机开关 |
2500 |
全新原装现货!自家库存! |
75R0规格书下载地址
75R0参数引脚图相关
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- 75QRS48W1.8LC
- 75QRS24X5LC
- 75QRS24X3.3LC
- 75QRS24X24LC
- 75QRS24X15LC
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- 75QRS24W5LC
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75R0数据表相关新闻
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Würth Elektronik 的推挽式变压器与 Texas Instruments 的多款芯片组配合使用
2024-3-2075783-0132
75783-0132
2023-5-975232G-TSSOP20R-TG_UTC代理商
75232G-TSSOP20R-TG_UTC代理商
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2020-11-307662CBD，9551CF，98FX910-A1E-BCE，898-3--R33，9112BM-17，920-BR06
7662CBD，9551CF，98FX910-A1E-BCE，898-3--R33，9112BM-17，920-BR06
2020-3-14
DdatasheetPDF页码索引
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