Hex Inverter

General Description The VHCT04A is an advanced high speed CMOS Inverter fabricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 3 stages inc

Hex Inverter

General Description The VHCT04A is an advanced high speed CMOS Inverter fabricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 3 stages inc

HEX INVERTER

DESCRIPTION The 74VHCT04A is an advanced high-speed CMOS HEX INVERTER fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. The internal circuit is composed of 3 stages including buffer output, which provides high noise immunity and stable output. ■ HIGH SPEED:

封装/外壳：14-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC INVERTER 6CH 1-INP 14SOIC 集成电路（IC） 门和反相器

HEX INVERTER

Hex Inverter

General Description The VHCT04A is an advanced high speed CMOS Inverter fabricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 3 stages inc

Hex Inverter

General Description The VHCT04A is an advanced high speed CMOS Inverter fabricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 3 stages inc

Hex Inverter

General Description The VHCT04A is an advanced high speed CMOS Inverter fabricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 3 stages inc

Hex Inverter

General Description The VHCT04A is an advanced high speed CMOS Inverter fabricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 3 stages inc

Hex Inverter

General Description The VHCT04A is an advanced high speed CMOS Inverter fabricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 3 stages inc

Hex Inverter

General Description The VHCT04A is an advanced high speed CMOS Inverter fabricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 3 stages inc

封装/外壳：14-TSSOP（0.173"，4.40mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC INVERTER 6CH 1-INP 14TSSOP 集成电路（IC） 门和反相器

HEX INVERTER

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Hex Inverter

Hex Inverter The MC74VHCT04A is an advanced high speed CMOS inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including

Hex Inverter

Hex Inverter The MC74VHCT04A is an advanced high speed CMOS inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including

Hex Inverter

Hex Inverter The MC74VHCT04A is an advanced high speed CMOS inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including

Hex Inverter

Hex Inverter The MC74VHCT04A is an advanced high speed CMOS inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including