8-Bit Shift Register with Output Latches

General Description The VHC595 is an advanced high-speed CMOS Shift Register fabricated with silicon gate CMOS technology. It achieves the high-speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. Features ■ High Speed: tPD = 5.4 ns (

8-Bit Shift Register with Output Latches

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8-Bit Shift Register with Output Latches

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封装/外壳：16-TSSOP（0.173"，4.40mm 宽） 功能：串行至并行，串行 包装：管件 描述：IC SHIFT REGISTER 8BIT 16TSSOP 集成电路（IC） 移位寄存器

8-Bit Shift Register with Output Latches

General Description The VHC595 is an advanced high-speed CMOS Shift Register fabricated with silicon gate CMOS technology. It achieves the high-speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. Features ■ High Speed: tPD = 5.4 ns (

封装/外壳：16-TSSOP（0.173"，4.40mm 宽） 功能：串行至并行，串行 包装：管件 描述：IC SHIFT REG 8B W/ LATCH 16TSSOP 集成电路（IC） 移位寄存器

8-Bit Shift Register with Output Latches

General Description The VHC595 is an advanced high-speed CMOS Shift Register fabricated with silicon gate CMOS technology. It achieves the high-speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. Features ■ High Speed: tPD = 5.4 ns (

8-Bit Shift Register with Output Latches

General Description The VHC595 is an advanced high-speed CMOS Shift Register fabricated with silicon gate CMOS technology. It achieves the high-speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. Features ■ High Speed: tPD = 5.4 ns (

8-Bit Shift Register with Output Storage Register

The MC74VHC595 is an advanced high speed 8–bit shift register with an output storage register fabricated with silicon gate CMOS technology. • High Speed: fmax = 185MHz (Typ) at VCC = 5V • Low Power Dissipation: ICC = 4µA (Max) at TA = 25°C • High Noise Immunity: VNIH = VNIL = 28 VCC • Pow

8-Bit Shift Register with Output Storage Register

The MC74VHC595 is an advanced high speed 8–bit shift register with an output storage register fabricated with silicon gate CMOS technology. • High Speed: fmax = 185MHz (Typ) at VCC = 5V • Low Power Dissipation: ICC = 4µA (Max) at TA = 25°C • High Noise Immunity: VNIH = VNIL = 28 VCC • Pow