OCTAL D-TYPE LATCH WITH 3 STATE OUTPUT NON INVERTING

DESCRIPTION The 74VHC573 is an advanced high-speed CMOS OCTAL D-TYPE LATCH with 3 STATE OUTPUTS NON INVERTING fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: tPD = 5.0 ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 4 µA (MAX.) at TA=25

OCTAL D-TYPE LATCH WITH 3 STATE OUTPUT NON INVERTING

DESCRIPTION The 74VHC573 is an advanced high-speed CMOS OCTAL D-TYPE LATCH with 3 STATE OUTPUTS NON INVERTING fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: tPD = 5.0 ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 4 µA (MAX.) at TA=25

Octal D-Type Latch with 3-STATE Outputs

General Description The VHC573 is an advanced high speed CMOS octal latch with 3-STATE output fabricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. This 8-bit D-type latch is

Octal D-Type Latch with 3-STATE Outputs

The MC74VHC573 is an advanced high speed CMOS octal latch with 3−state output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. This 8−bit D−type latch is controlled by a latch en

Octal D-Type Latch with 3-STATE Outputs

General Description The VHC573 is an advanced high speed CMOS octal latch with 3-STATE output fabricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. This 8-bit D-type latch is

Octal D-Type Latch with 3-STATE Outputs

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OCTAL D-TYPE LATCH WITH 3 STATE OUTPUT NON INVERTING

DESCRIPTION The 74VHC573 is an advanced high-speed CMOS OCTAL D-TYPE LATCH with 3 STATE OUTPUTS NON INVERTING fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: tPD = 5.0 ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 4 µA (MAX.) at TA=25