QUAD BUS BUFFERS (3-STATE)

DESCRIPTION The 74VHC126 is an advanced high-speed CMOS QUAD BUS BUFFERs fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. The device requires the 3-STATE control input G to be set low to place the output go in to the high impedance state. ■ HIGH SPEED: tPD

QUAD BUS BUFFERS (3-STATE)

QUAD BUS BUFFERS (3-STATE)

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封装/外壳：14-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC BUFFER NON-INVERT 5.5V 14SO 集成电路（IC） 缓冲器，驱动器，接收器，收发器

Quad Bus Buffer

The MC74VHC126 is a high speed CMOS quad bus buffer fabricated with silicon gate CMOS technology. It achieves noninverting high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. • High Speed: tPD = 3.8 ns (Typ) at VCC = 5.0 V • Low Powe

Quad Bus Buffer

The MC74VHC126 is a high speed CMOS quad bus buffer fabricated with silicon gate CMOS technology. It achieves noninverting high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. • High Speed: tPD = 3.8 ns (Typ) at VCC = 5.0 V • Low Powe

Quad Bus Buffer

The MC74VHC126 is a high speed CMOS quad bus buffer fabricated with silicon gate CMOS technology. It achieves noninverting high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. • High Speed: tPD = 3.8 ns (Typ) at VCC = 5.0 V • Low Powe

Quad Bus Buffer

The MC74VHC126 is a high speed CMOS quad bus buffer fabricated with silicon gate CMOS technology. It achieves noninverting high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. • High Speed: tPD = 3.8 ns (Typ) at VCC = 5.0 V • Low Powe